Shenzhen-ruichips-Semicon-RU207C
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RU207C
N-Channel Advanced Power MOSFET
Features
Pin Description
• 20V/6A,
R
DS (ON)
=10m
Ω
(Typ.)@V
GS
=4.5V
R
DS (ON)
=15m
Ω
(Typ.)@V
GS
=2.5V
• Low R
DS (ON)
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
SOT23-3
Applications
• Power Management
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
20
±12
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
150
°C
°C
A
T
STG
I
S
-55 to 150
1.7
T
A
=25°C
Mounted on Large Heat Sink
①
300
μ
s Pulse Drain Current Tested
T
A
=25°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
24
6
A
A
I
DP
②
Continuous Drain Current(V
GS
=4.5V)
Maximum Power Dissipation
I
D
4.5
1.25
0.75
–
P
D
R
JC
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
°C/W
°C/W
③
100
R
JA
Drain-Source Avalanche Ratings
④
E
AS
Avalanche Energy, Single Pulsed
TBD
mJ
Ruichips Semiconductor Co., Ltd
Rev. C– AUG., 2015
1
RU207C
Electrical Characteristics
(T
A
=25°C Unless Otherwise Noted)
RU207C
Typ.
Symbol
Parameter
Test Condition
Unit
Min.
Max.
Static Characteristics
V
GS
=0V, I
DS
=250µA
V
DS
=20V, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
20
V
1
30
I
DSS
Zero Gate Voltage Drain Current
µA
T
J
=125°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±10V, V
DS
=0V
V
GS
=4.5V, I
DS
=6A
V
GS
=2.5V, I
DS
=5A
V
GS(th)
I
GSS
Gate Threshold Voltage
Gate Leakage Current
0.5
0.7
1.5
±100
13
V
nA
10
15
m
Ω
m
Ω
⑤
Drain-Source On-state Resistance
R
DS(ON)
18
Diode Characteristics
⑤
V
SD
I
SD
=1A, V
GS
=0V
Diode Forward Voltage
1
V
t
rr
Reverse Recovery Time
15
8
ns
nC
I
SD
=1A, dl
SD
/dt=100A/µs
Q
rr
Reverse Recovery Charge
⑥
Dynamic Characteristics
V
GS
=0V,V
DS
=0V,F=1MHz
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
Gate Resistance
1.5
590
125
90
Ω
V
GS
=0V,
V
DS
=10V,
Frequency=1.0MHz
Input Capacitance
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
8
15
V
DD
=10V, I
DS
=6A,
V
GEN
=4.5V,R
G
=6
Ω
ns
t
d(OFF)
t
f
Turn-off Delay Time
33
Turn-off Fall Time
13
⑥
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
10
1.6
3.4
V
DS
=16V, V
GS
=4.5V,
I
DS
=6A
nC
①
Pulse width limited by safe operating area.
②
Calculated continuous current based on maximum allowable
junction temperature.
Notes:
③
When mounted on 1 inch square copper board, t
≤
10sec. The value in any given application
depends on the user’s specific board design.
④
Limited by T
Jmax.
Starting T
J
= 25°C.
⑤
Pulse test;Pulse width
≤
300µs, duty cycle
≤
2%.
⑥
Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. C– AUG., 2015
2
RU207C
Ordering and Marking Information
①
Device
Package
Packaging Quantity
Reel Size
Tape width
Marking
RU207C
4XYWW
SOT23-3
Tape&Reel
3000
7’’
8mm
①
The following characters could be different and means:
X
Y
=Assembly site code
=Year
WW =Work
Week
Ruichips Semiconductor Co., Ltd
Rev. C– AUG., 2015
3
RU207C
Typical Characteristics
Power Dissipation
Drain Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
VGS=4.5V
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
J
– Junction Temperature (
°
C)
T
J
– Junction Temperature (
°
C)
Drain Current
50
40
30
20
10
0
Safe Operation Area
100
10
Ids=6A
10µs
100µs
1ms
1
10ms
0.1
0.01
DC
1
T
A
=25°C
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
10
100
1000
V
GS
– Gate-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
Thermal Transient Impedance
1000
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
100
10
1
Single Pulse
0.0001
0.1
R
θ
JA
=
100°C/W
0.01
1E-05
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. C– AUG., 2015
4
RU207C
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
30
25
20
15
10
5
50
40
30
20
10
0
4V
4.5V
3V
2.5V
2V
2.5V
4.5V
1.5V
0
0
1
2
3
4
5
0
2
4
6
8
10
V
DS
– Drain-Source Voltage (V)
I
D
– Drain Current (A)
Drain-Source On Resistance
Source-Drain Diode Forward
2.5
2.0
1.5
1.0
0.5
0.0
10
1
V
GS
=4.5V
I
DS
=6A
T
J
=150°C
T
J
=25°C
0.1
0.01
T
J
=25°C
Rds(on)=10m
Ω
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100 125 150
V
SD
– Source-Drain Voltage (V)
T
J
– Junction Temperature (
°
C)
Capacitance
Gate Charge
1000
800
600
400
200
0
10
VDS=16V
IDS=6A
Frequency=1.0MHz
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
1
10
100
0
5
10
15
V
DS
– Drain-Source Voltage (V)
Q
G
– Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. C– AUG., 2015
5
RU207C
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. C– AUG., 2015
6
RU207C
Package Information
SOT23-3
Ruichips Semiconductor Co., Ltd
Rev. C– AUG., 2015
7
RU207C
Customer Service
Worldwide Sales and Service:
Technical Support:
Investor Relations Contacts:
Marcom Contact:
Editorial Contact:
HR Contact:
Legal Contact:
Shen Zhen RUICHIPS Semiconductor CO., LTD
4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park,
Nanshan District, Shenzhen, CHINA
TEL:
(86-755) 8311-5334
FAX:
(86-755) 8311-4278
Ruichips Semiconductor Co., Ltd
Rev. C– AUG., 2015
8
