Shenzhen-ruichips-Semicon-RU2N7002EB
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2N7002
N-Channel Advanced Power MOSFET
Features
Pin Description
• 60V/0.5A,
R
DS (ON)
=4500mΩ(Typ.)@V
GS
=10V
D
R
DS (ON)
=5250mΩ(Typ.)@V
GS
=4.5V
• Low On-Resistance
• Super High Dense Cell Design
• Reliable and Rugged
G
• Lead Free and Green Devices Available (RoHS Compliant)
S
SOT23
D
Applications
• Power Management in Desktop Computer or DC/DC Converters
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
60
±20
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
150
°C
°C
A
T
STG
I
S
-55 to 150
1.25
T
A
=25°C
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
T
A
=25°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
2
0.5
0.4
1
A
A
I
DP
②
Continuous Drain Current(V
GS
=10V)
Maximum Power Dissipation
I
D
P
D
W
0.64
–
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
R
θ
JC
°C/W
°C/W
③
125
R
θ
JA
Drain-Source Avalanche Ratings
④
Avalanche Energy, Single Pulsed
TBD
mJ
E
AS
Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2013
1
2N7002
Electrical Characteristics
(T
A
=25°C Unless Otherwise Noted)
2N7002
Typ.
Symbol
Parameter
Test Condition
Unit
Min.
Max.
Static Characteristics
V
GS
=0V, I
DS
=250µA
V
DS
=60V, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
60
V
1
I
DSS
Zero Gate Voltage Drain Current
µA
T
J
=125°C
30
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=0.5A
V
GS
=4.5V, I
DS
=0.2A
V
GS(th)
I
GSS
Gate Threshold Voltage
Gate Leakage Current
1
2.5
V
±100
7500
7500
nA
4500
5250
mΩ
mΩ
⑤
R
DS(ON)
Drain-Source On-state Resistance
Diode Characteristics
⑤
I
SD
=0.5A, V
GS
=0V
Diode Forward Voltage
1.2
V
V
SD
t
rr
Reverse Recovery Time
19
8
ns
nC
I
SD
=0.5A, dl
SD
/dt=100A/µs
Q
rr
Reverse Recovery Charge
⑥
Dynamic Characteristics
V
GS
=0V,V
DS
=0V,F=1MHz
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
Gate Resistance
0.5
250
65
30
6
Ω
V
GS
=0V,
V
DS
=30V,
Frequency=1.0MHz
Input Capacitance
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
15
29
9
V
DD
=30V, I
DS
=0.5A,
ns
V
GEN
=10V,R
G
=6Ω
t
d(OFF)
t
f
Turn-off Fall Time
⑥
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
7
V
DS
=48V, V
GS
=10V,
I
DS
=0.5A
nC
1.4
2.5
①
Pulse width limited by safe operating area.
Notes:
②
Calculated continuous current based on maximum allowable
junction temperature.
③
When mounted on 1 inch square copper board, t
≤
10sec. The value in any given application
depends on the user’s specific board design.
④
Limited by T
Jmax.
Starting T
J
= 25°C.
⑤
Pulse test;Pulse width
≤
300µs, duty cycle
≤
2%.
⑥
Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2013
2
2N7002
Ordering and Marking Information
Device
Marking
Package Packaging
Quantity Reel
Size Tape
width
2N7002
7002
SOT23
Tape&Reel
3000
7’’
8mm
Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2013
3
2N7002
Typical Characteristics
Power Dissipation
Drain Current
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
VGS=10V
25 50
0
25
50
75
100
125
150
175
75
100
125
150
175
T
J
– Junction Temperature (
°
C)
T
J
– Junction Temperature (
°
C)
Drain Current
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
Safe Operation Area
Ids=0.5A
1
10µs
100µs
1ms
0.1
0.01
10ms
DC
1
T
A
=25°C
0.01 0.1
0.001
0
1
2
3
4
5
6
7
8
9
10
10
100
V
GS
– Gate-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
100
10
1
Single Pulse
0.0001
0.1
0.01
R
θ
JA
=
125°C/W
1E-05
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2013
4
2N7002
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
1.0
0.8
0.6
0.4
0.2
0.0
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
6V
10V
4.5V
3V
4.5V
2.5V
10V
2V
0
1
2
3
4
5
0.0
1
0.2
0.4
0.6
0.8
1.0
V
DS
– Drain-Source Voltage (V)
I
D
– Drain Current (A)
Drain-Source On Resistance
Source-Drain Diode Forward
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
=10V
I
DS
=0.5A
T
J
=150°C
0.1
T
J
=25°C
T
J
=25°C
Rds(on)=4500m
Ω
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100 125 150
V
SD
– Source-Drain Voltage (V)
T
J
– Junction Temperature (
°
C)
Capacitance
Gate Charge
500
400
300
200
100
0
10
9
8
7
6
5
4
3
2
1
0
VDS=48V
IDS=0.5A
Frequency=1.0MHz
Ciss
Coss
Crss
1
10
100
0
2
4
6
8
V
DS
– Drain-Source Voltage (V)
Q
G
– Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2013
5
2N7002
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2013
6
2N7002
Package Information
SOT23
D
b
θ
0.25
e
C
e1
MM
INCH
SYMBOL
MIN
0.900
NOM
1.025
0.075
0.975
0.400
0.115
2.900
1.300
2.400
0.950 TYP
1.900
0.540 REF
0.500
MAX
1.150
0.100
1.020
0.500
0.150
3.000
1.400
2.550
MIN
0.035
0.002
0.035
0.012
0.003
0.110
0.047
0.089
NOM
0.040
0.003
0.038
0.016
0.005
0.114
0.051
0.094
0.037 TYP
0.075
0.021 REF
0.018
*
MAX
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
0.045
0.004
0.040
0.020
0.006
0.118
0.055
0.100
0.050
0.900
0.300
0.080
2.800
1.200
2.250
1.800
2.000
0.071
0.079
0.400
0°
0.600
8°
0.016
0°
0.020
8°
*
Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2013
7
2N7002
Customer Service
Worldwide Sales and Service:
Technical Support:
Investor Relations Contacts:
Marcom Contact:
Editorial Contact:
HR Contact:
Legal Contact:
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL:
(86-755) 8311-5334
FAX:
(86-755) 8311-4278
Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2013
8
