Shenzhen-ruichips-Semicon-RU3020H
| Part # | Shenzhen-ruichips-Semicon-RU3020H |
Download  | Shenzhen-ruichips-Semicon-RU3020H |
RU3020H
N-Channel Advanced Power MOSFET
Features
Pin Description
• 30V/12A,
R
DS (ON)
=9.5
m
(Typ.) @ V
GS
=10V
R
DS (ON)
=15
m
(Typ.) @ V
GS
=4.5V
• Super High Dense Cell Design
•
Reliable and Rugged
•
100% avalanche tested
SOP-8
• Lead Free and Green Available
Applications
•
Power Management in Notebook
Computer, and DC-DC Converters in
Networking Systems.
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
30
±20
V
DSS
V
GSS
T
J
Drain-Source Voltage
Gate-Source Voltage
V
°C
°C
A
150
Maximum Junction
T
emperature
Storage
T
emperature Range
T
STG
I
S
-55 to 150
12
Diode Continuous Forward Current
T
C
=25°C
T
C
=25°C
Mounted on Large Heat Sink
①
48
I
DP
300μs Pulse Drain Current Tested
A
A
T
C
=25°C
T
C
=70°C
T
C
=25°C
T
C
=70°C
12
I
D
Continuous Drain Current(V
GS
=10V)
9.6
2.5
1.6
P
D
Maximum Power Dissipation
W
②
R
JA
50
Thermal Resistance-Junction to Ambient
°C/W
Drain-Source Avalanche Ratings
③
105
Avalanche Energy, Single Pulsed
mJ
E
AS
Copyright
Ruichips Semiconductor Co., Ltd
Rev. C– MAR., 2013
RU3020H
Electrical Characteristics
(T
A
=25°C Unless Otherwise Noted)
RU3020H
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
V
GS(th)
Gate Threshold Voltage
V
V
GS
=0V, I
DS
=250 A
30
V
DS
= 30V, V
GS
=0V
1
A
T
J
=85°C
30
V
V
DS
=V
GS
, I
DS
=250 A
1.0
2.5
I
GSS
Gate Leakage Current
V
GS
=±20V, V
DS
=0V
nA
±100
V
GS
= 10V, I
DS
=10A
V
GS
= 4.5V, I
DS
=8A
9.5
15
15
21
m
m
④
R
DS(ON)
Drain-Source On-state Resistance
Diode Characteristics
④
Diode Forward Voltage
I
SD
=12A, V
GS
=0V
1.2
V
V
SD
t
rr
Reverse Recovery Time
20
12
ns
I
SD
=12A, dl
SD
/dt=100A/
s
Q
rr
Reverse Recovery Charge
⑤
nC
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
1.2
980
160
120
12
Input Capacitance
V
GS
=0V,
V
DS
= 15V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
pF
t
d(ON)
Turn-on Delay Time
t
r
Turn-on Rise Time
t
d(OFF)
Turn-off Delay Time
t
f
Turn-off Fall Time
V
DD
=15V, R
L
=30
,
I
DS
=12A, V
GEN
= 10V,
R
G
=6
19
ns
34
16
⑤
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
19
3
25
V
DS
=15V, V
GS
= 10V,
I
DS
=12A
Gate-Source Charge
Gate-Drain Charge
nC
7
Notes:
①
Pulse width limited by safe operating area.
②
When mounted on 1 inch square copper board, t
10sec.
③
Limited by T
Jmax
, I
AS
=20A, V
DD
= 48V, R
G
= 50
Ω
, Starting T
J
= 25°C.
④
Pulse test ; Pulse width
300
s, duty cycle
2%.
⑤
Guaranteed by design, not subject to production testing.
2
Copyright
Ruichips Semiconductor Co., Ltd
Rev. C– MAR., 2013
RU3020H
Typical Characteristics
Power Dissipation
Drain Current
T
j
– Junction Temperature (
°
C)
T
j
– Junction Temperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
V
DS
– Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
3
Copyright
Ruichips Semiconductor Co., Ltd
Rev. C– MAR., 2013
RU3020H
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
– Drain-Source Voltage (V)
Drain-Source On Resistance
I
D
– Drain Current (A)
Gate Threshold Voltage
V
GS
– Gate-Source Voltage (V)
T
j
– Junction Temperature (°C)
4
Copyright
Ruichips Semiconductor Co., Ltd
Rev. C– MAR., 2013
RU3020H
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
T
j
– Junction Temperature (°C)
Capacitance
V
SD
– Source-Drain Voltage (V)
Gate Charge
V
DS
– Drain-Source Voltage (V)
Q
G
– Gate Charge (nC)
5
Copyright
Ruichips Semiconductor Co., Ltd
Rev. C– MAR., 2013
RU3020H
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
6
Copyright
Ruichips Semiconductor Co., Ltd
Rev. C– MAR., 2013
RU3020H
Ordering and Marking Information
Device
Marking
Package
Packaging
Quantity
Reel Size
Tape width
RU3020H
RU3020H
SOP-8
Tape&Reel
2500
13’’
12mm
7
Copyright
Ruichips Semiconductor Co., Ltd
Rev. C– MAR., 2013
RU3020H
Package Information
SOP-8
MM
INCH
MAX
0.069
MM
INCH
MIN MAX
SYMBOL
SYMBOL
MIN
1.350
0.100
1.350
0.330
0.170
4.700
MAX
1.750
0.250
1.550
0.510
0.250
5.100
MIN
0.053
0.004
0.053
0.013
0.006
0.185
MIN
3.800
5.800
MAX
4.000
6.200
A
A1
A2
b
E
E1
e
0.150
0.228
0.157
0.244
0.010
0.061
0.020
0.010
0.200
1.270 (BSC)
0.050 (BSC)
L
0.400
0
°
1.270
0.016
0.050
c
θ
8
°
0
°
8
°
D
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
8
Copyright
Ruichips Semiconductor Co., Ltd
Rev. C– MAR., 2013
RU3020H
Customer Service
Worldwide Sales and Service:
Technical Support:
Investor Relations Contacts:
Marcom Contact:
Editorial Contact:
HR Contact:
HR@ruichips.
com
Legal Contact:
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL:
(86-755) 8311-5334
FAX:
(86-755) 8311-4278
9
Copyright
Ruichips Semiconductor Co., Ltd
Rev. C– MAR., 2013
