Shenzhen-ruichips-Semicon-RU40120R
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RU40120R
N-Channel Advanced Power MOSFET
Features
Pin Description
• 40V/120A,
R
•
Super High Dense Cell Design
• Ultra Low On-Resistance
•
100% avalanche tested
TO-220
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• DC-DC
Converters
• Power
Supply
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
40
±20
V
DSS
V
GSS
T
J
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
175
Maximum Junction
T
e
mperature
Storage
T
e
mperature Range
T
STG
-55 to 175
①
120
I
S
Diode Continuous Forward Current
T
C
=25°C
T
C
=25°C
A
Mounted on Large Heat Sink
②
480
I
DP
300μs Pulse Drain Current Tested
A
A
①
120
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
I
D
Continuous Drain Current(V
GS
=10V)
103
150
W
W
P
D
Maximum Power Dissipation
75
1.0
R
q
JC
Thermal Resistance-Junction to Case
°C/W
Drain-Source Avalanche Ratings
③
400
Avalanche Energy, Single Pulsed
mJ
E
AS
Rev. B– APR., 2011
Electrical Characteristics
(T
A
=25°C Unless Otherwise Noted)
RU40120R
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=0V, I
DS
=250
m
A
40
V
DS
= 40V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
m
A
T
J
=85°C
10
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
V
V
DS
=V
GS
, I
DS
=250
m
A
2
3
4
V
GS
=±20V, V
DS
=0V
nA
±100
④
Drain-Source On-state Resistance
V
GS
= 10V, I
DS
=60A
3.5
4.5
m
W
R
DS(ON)
Diode Characteristics
④
Diode Forward Voltage
I
SD
=60A, V
GS
=0V
0.8
1.2
V
V
SD
t
rr
Reverse Recovery Time
33
30
ns
I
SD
=60A, dl
SD
/dt=100A/
m
s
Q
rr
Reverse Recovery Charge
nC
⑤
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
W
1.8
3700
680
345
36
Input Capacitance
V
GS
=0V,
V
DS
= 20V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
pF
t
d(ON)
Turn-on Delay Time
t
r
Turn-on Rise Time
t
d(OFF)
Turn-off Delay Time
t
f
Turn-off Fall Time
V
DD
=20V, R
L
=30
W
,
I
DS
=60A, V
GEN
= 10V,
R
G
=4.7
W
205
85
ns
45
⑤
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
90
32
37
V
DS
=32V, V
GS
= 10V,
I
DS
=60A
Gate-Source Charge
Gate-Drain Charge
nC
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Limited by bonding
wire.
Pulse width limited by safe operating area..
Limited by T
Jmax
, I
AS
=40A, V
DD
= 32V, R
G
= 47
Ω
, Starting T
J
= 25°C.
Pulse test ; Pulse width
£
300
m
s, duty cycle
£
2%.
Guaranteed by design, not subject to production testing.
2
Rev. B– APR., 2011
Typical Characteristics
Power Dissipation
Drain Current
T
j
– Junction Temperature (
°
C)
T
j
– Junction Temperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
V
DS
– Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
3
Rev. B– APR., 2011
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
– Drain-Source Voltage (V)
Drain-Source On Resistance
I
D
– Drain Current (A)
Gate Threshold Voltage
V
GS
– Gate-Source Voltage (V)
T
j
– Junction Temperature (°C)
4
Rev. B– APR., 2011
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
T
j
– Junction Temperature (°C)
Capacitance
V
SD
– Source-Drain Voltage (V)
Gate Charge
V
DS
– Drain-Source Voltage (V)
Q
G
– Gate Charge (nC)
5
Rev. B– APR., 2011
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
6
Rev. B– APR., 2011
Ordering and Marking Information
Device
Marking
Package
Packaging
Quantity
Reel Size
Tape width
RU40120R
RU40120R
TO-220
Tube
50
–
–
7
Rev. B– APR., 2011
Package Information
TO-220FB-3L
MM
INCH
NOM MAX
MM
INCH
SYMBOL
SYMBOL
MIN
4.40
1.27
2.35
0.77
1.23
0.48
NOM MAX MIN
MIN
1.40
NOM MAX
MIN
NOM MAX
A
A1
A2
b
4.57
1.30
2.40
–
4.70
1.33
2.50
0.90
1.36
0.52
0.173 0.180 0.185
0.050 0.051 0.052
0.093 0.094 0.098
Øp1
e
1.50
2.54BSC
5.08BSC
6.50
1.60
0.055 0.059 0.063
0.1BSC
e1
H1
L
0.2BSC
0.030
0.048
–
–
0.035
0.054
6.40
12.75
–
6.60
0.252 0.256 0.260
b2
C
–
–
13.17 0.502
–
0.519
0.156
0.50
0.019 0.020 0.021
L1
L2
Øp
Q
–
3.95
–
–
D
15.40 15.60 15.80 0.606 0.614 0.622
2.50REF.
3.60
0.098REF.
D1
DEP
E
9.00
0.05
9.70
–
9.10
0.10
9.90
8.70
9.20
0.20
0.354 0.358 0.362
0.002 0.004 0.008
3.57
2.73
5°
1
°
3.63
2.87
9
°
5
°
0.141 0.142 0.143
0.107 0.110 0.113
2.80
10.10 0.382 0.389 0.398
0.343
7
°
5
°
1
°
7
°
3
°
9
°
5
°
θ
1
θ
2
E1
E2
–
–
–
3
°
9.80
10.00 10.20 0.386 0.394 0.401
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
8
Rev. B– APR., 2011
Customer Service
Worldwide Sales and Service:
Technical Support:
Investor Relations Contacts:
Marcom Contact:
Editorial Contact:
HR Contact:
Legal Contact:
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL:
(86-755) 8311-5334
FAX:
(86-755) 8311-4278
9
Rev. B– APR., 2011
