Shenzhen-ruichips-Semicon-RU8590R
| Part # | Shenzhen-ruichips-Semicon-RU8590R |
Download  | Shenzhen-ruichips-Semicon-RU8590R |
RU8590R
N-Channel Advanced Power MOSFET
Features
Pin Description
• 85V/90A,
R
DS (ON)
=5.8mΩ(Typ.)@V
GS
=10V
• Ultra Low On-Resistance
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
G
D
S
TO220
D
Applications
• High Speed Power Switching
• UPS
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
85
±25
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
T
STG
I
S
-55 to 175
90
T
C
=25°C
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
360
90
A
A
I
DP
②
Continuous Drain Current(V
GS
=10V)
Maximum Power Dissipation
I
D
64
188
94
P
D
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
R
θ
JC
R
θ
JA
0.8
62.5
°C/W
°C/W
Drain-Source Avalanche Ratings
③
Avalanche Energy, Single Pulsed
306
mJ
E
AS
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
1
RU8590R
Electrical Characteristics
(T
C
=25°C Unless Otherwise Noted)
RU8590R
Typ.
Symbol
Parameter
Test Condition
Unit
Min.
Max.
Static Characteristics
V
GS
=0V, I
DS
=250µA
V
DS
=85V, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
85
90
V
1
I
DSS
Zero Gate Voltage Drain Current
µA
30
T
J
=125°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
=10V, I
DS
=45A
V
GS(th)
I
GSS
Gate Threshold Voltage
2
3
4
±100
8
V
Gate Leakage Current
nA
mΩ
④
R
DS(ON)
Drain-Source On-state Resistance
5.8
Diode Characteristics
④
I
SD
=45A, V
GS
=0V
Diode Forward Voltage
1.2
V
V
SD
t
rr
Reverse Recovery Time
29
45
ns
nC
I
SD
=45A, dl
SD
/dt=100A/µs
Q
rr
Reverse Recovery Charge
⑤
Dynamic Characteristics
V
GS
=0V,V
DS
=0V,F=1MHz
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
Gate Resistance
1.3
4350
480
275
25
Ω
V
GS
=0V,
V
DS
=40V,
Frequency=1.0MHz
Input Capacitance
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
49
V
DD
=40V,I
DS
=45A,
ns
V
GEN
=10V,R
G
=0.8Ω
t
d(OFF)
t
f
121
17
Turn-off Fall Time
⑤
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
48
13
16
V
DS
=68V, V
GS
=10V,
I
DS
=45A
nC
①
Pulse width limited by safe operating area.
Notes:
②
Calculated continuous current based on maximum allowable
junction temperature. The package
limitation current is 75A.
③
Limited by T
Jmax
, I
AS
=35A, V
DD
= 48V, R
G
= 50Ω , Starting T
J
= 25°C.
④
Pulse test;Pulse width
≤
300µs, duty cycle
≤
2%.
⑤
Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
2
RU8590R
Ordering and Marking Information
Device
Marking
Package Packaging
Quantity Reel
Size Tape
width
RU8590R
RU8590R
TO220
Tube
50
–
–
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
3
RU8590R
Typical Characteristics
Power Dissipation
Drain Current
200
180
160
140
120
100
80
100
90
80
70
60
50
40
30
20
10
0
Limited By Package
60
40
20
V
GS
=10V
25 50
0
0
25
50
75
100
125
150
175
75
100
125
150
175
T
J
– Junction Temperature (
°
C)
T
J
– Junction Temperature (
°
C)
Drain Current
15
13
10
8
Safe Operation Area
10000
1000
100
10
I
DS
=45A
10µs
100µs
1ms
10ms
DC
5
1
3
T
C
=25°C
0.01 0.1
0
0.1
0
1
2
3
4
5
6
7
8
9
10
1
10
100
V
GS
– Gate-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
0.01
Single Pulse
R
θ
JC
=
0.8°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
4
RU8590R
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
180
150
120
90
20
18
15
13
10
8
8,9,10V
6V
5V
4V
60
V
GS
=10V
5
30
3V
3
0
0
0
1
2
3
4
5
0
30
60
90
120
V
DS
– Drain-Source Voltage (V)
I
D
– Drain Current (A)
Drain-Source On Resistance
Source-Drain Diode Forward
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
V
GS
=10V
I
D
=45A
T
J
=175°C
T
J
=25°C
T
J
=25°C
Rds(on)=5.8m
Ω
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
-50 -25
0
25
50
75 100
125 150 175
V
SD
– Source-Drain Voltage (V)
T
J
– Junction Temperature (
°
C)
Capacitance
Gate Charge
6000
5400
4800
4200
3600
3000
2400
1800
1200
600
10
9
8
7
6
5
4
3
2
1
0
V
DS
=68V
I
DS
=45A
Frequency=1.0MHz
Ciss
Coss
Crs
s
0
1
10
100
0
20
40
60
V
DS
– Drain-Source Voltage (V)
Q
G
– Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
5
RU8590R
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
6
RU8590R
Package Information
TO220
E
A
E1
A1
p
Q
H1
θ
1
1
P
D
DEP
D1
L1
θ
2
θ
1
b2
L
b
C
A2
e
e1
E2
MM
NOM
INCH
NOM
MM
NOM
1.50
2.54 BSC
5.08 BSC
INCH
NOM
0.059
0.10 BSC
0.20 BSC
SYMBOL
SYMBOL
MIN
4.40
1.20
2.23
0.75
1.17
0.40
15.40
8.96
0.05
9.66
*
MAX
4.70
1.40
2.53
0.85
1.39
0.60
15.80
9.46
0.20
10.28
*
MIN
MAX
0.185
0.055
0.100
0.033
0.055
0.024
0.622
0.372
0.008
0.405
*
MIN
MAX
MIN
MAX
A
A1
A2
b
4.55
1.30
2.38
0.80
1.28
0.50
15.60
9.21
0.13
9.97
8.70
10.00
0.173
0.047
0.088
0.030
0.046
0.016
0.606
0.353
0.002
0.380
*
0.179
0.051
0.094
0.031
0.050
0.020
0.614
0.363
0.005
0.393
0.343
0.394
Φp1
e
1.40
1.60
0.055
0.063
e1
H1
L
6.40
6.50
13.18
*
6.60
0.252
0.500
*
0.256
0.519
*
0.260
0.537
0.156
b2
c
12.70
*
13.65
3.95
L1
L2
Φp
Q
2.50 REF
D
0.098 REF
0.142
0.110
7°
D1
DEP
E
3.50
2.73
5°
3.60
2.80
7°
3.70
2.87
9°
0.138
0.107
5°
0.146
0.113
9°
θ1
θ2
E1
E2
1°
3°
5°
1°
3°
5°
9.80
10.20
0.386
0.402
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
7
RU8590R
Customer Service
Worldwide Sales and Service:
Technical Support:
Investor Relations Contacts:
Marcom Contact:
Editorial Contact:
HR Contact:
Legal Contact:
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL:
(86-755) 8311-5334
FAX:
(86-755) 8311-4278
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
8
