Shenzhen-ruichips-Semicon-RU8590S

RU8590S  

N-Channel Advanced Power MOSFET  

Features  

Pin Description  

• 85V/90A,  

R

DS (ON)

=5.8m

Ω

(Typ.)@V

GS

=10V  

• Ultra Low On-Resistance  

• Fast Switching and Fully Avalanche Rated  

• 100% avalanche tested  

D

• 175°C Operating Temperature  

• Lead Free and Green Devices Available (RoHS Compliant)  

G

S

TO263  

D

Applications  

• High Speed Power Switching  

• UPS  

G

S

N-Channel MOSFET  

Absolute Maximum Ratings  

Parameter  

Symbol  

Rating  

Unit  

Common Ratings

(T

C

=25°C Unless Otherwise Noted)  

V

DSS  

V

GSS  

T

J  

Drain-Source Voltage  

85  

±25  

V

Gate-Source Voltage  

Maximum Junction Temperature  

Storage Temperature Range  

Diode Continuous Forward Current  

175  

°C  

°C  

A

T

STG  

I

S  

-55 to 175  

90  

T

C

=25°C  

Mounted on Large Heat Sink  

①

300

μ

s Pulse Drain Current Tested  

T

C

=25°C  

T

C

=25°C  

T

C

=100°C  

T

C

=25°C  

T

C

=100°C  

360  

90  

A

A

I

DP  

②

Continuous Drain Current(V

GS

=10V)  

Maximum Power Dissipation  

I

D  

64  

188  

94  

P

D  

W

Thermal Resistance-Junction to Case  

Thermal Resistance-Junction to Ambient  

R



JC  

R



JA  

0.8  

62.5  

°C/W  

°C/W  

Drain-Source Avalanche Ratings  

③

E

AS  

Avalanche Energy, Single Pulsed  

306  

mJ  

Ruichips Semiconductor Co., Ltd  

Rev. A– JAN., 2015  

1

RU8590S  

El t

 

i l

 

Ch t

 

i ti  

Electrical Characteristics

(T

C

=25°C Unless Otherwise Noted)  

RU8590S  

Typ.  

Symbol  

Parameter  

Test Condition  

Unit  

Min.  

Max.  

Static Characteristics  

V

GS

=0V, I

DS

=250µA  

V

DS

=85V, V

GS

=0V  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

85  

90  

V

1

µA  

30  

T

J

=125°C  

V

DS

=V

GS

, I

DS

=250µA  

V

GS

=±25V, V

DS

=0V  

V

GS

=10V, I

DS

=45A  

V

GS(th)  

I

GSS  

Gate Threshold Voltage  

2

3

4

±100  

8

V

Gate Leakage Current  

nA  

m

Ω  

④

R

DS(ON)  

Drain-Source On-state Resistance  

5.8  

Diode Characteristics  

④

V

SD  

I

SD

=45A, V

GS

=0V  

Diode Forward Voltage  

1.2  

V

t

rr  

Reverse Recovery Time  

29  

45  

ns  

nC  

I

SD

=45A, dl

SD

/dt=100A/µs  

Q

rr  

Reverse Recovery Charge  

⑤

Dynamic Characteristics  

V

GS

=0V,V

DS

=0V,F=1MHz  

R

G  

C

iss  

C

oss  

C

rss  

t

d(ON)  

t

r  

Gate Resistance  

1.3  

4350  

480  

275  

25  

Ω

V

GS

=0V,  

V

DS

=40V,  

Frequency=1.0MHz  

Input Capacitance  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-on Delay Time  

Turn-on Rise Time  

49  

V

DD

=40V,I

DS

=45A,  

V

GEN

=10V,R

G

=0.8

Ω  

ns  

t

d(OFF)  

t

f  

Turn-off Delay Time  

121  

17  

Turn-off Fall Time  

⑤

Gate Charge Characteristics  

Q

g  

Q

gs  

Q

gd  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

48  

13  

16  

V

DS

=68V, V

GS

=10V,  

I

DS

=45A  

nC  

①

Pulse width limited by safe operating area.  

Notes:  

②

Calculated continuous current based on maximum allowable

 

junction temperature. The package  

limitation current is 75A.  

③

Limited by T

Jmax

, I

AS

=35A, V

DD

= 48V, R

G

= 50

Ω

, Starting T

J

= 25°C.  

④

Pulse test;Pulse width

≤

300µs, duty cycle

≤

2%.  

⑤

Guaranteed by design, not subject to production testing.  

Ruichips Semiconductor Co., Ltd  

Rev. A– JAN., 2015  

2

RU8590S  

O d

 

i d

 

M ki

 

I f

 

ti  

Ordering and Marking Information  

Device  

Marking  

Package  

Packaging Quantity

 

Reel Size

 

Tape width  

RU8590S  

RU8590S  

TO263  

Tube  

50  

–

–

Ruichips Semiconductor Co., Ltd  

Rev. A– JAN., 2015  

3

RU8590S  

T

T

i l

 

C

h

harac

t

t i

 

ti  

ypical eristics  

Power Dissipation  

Drain Current  

200  

180  

160  

140  

120  

100  

80  

100  

90  

80  

70  

60  

50  

40  

30  

20  

10  

0

Limited By Package  

60  

40  

20  

V

GS

=10V  

0

0

25  

50  

75  

100  

125  

150  

175  

25  

50  

75  

100  

125  

150  

175  

T

J

– Junction Temperature (

°

C)  

T

J

– Junction Temperature (

°

C)  

Drain Current  

15  

13  

10  

8

Safe Operation Area  

10000  

1000  

100  

10  

I

DS

=45A  

10µs  

100µs  

1ms  

10ms  

DC  

5

1

3

T

C

=25°C  

0

0.1  

0

1

2

3

4

5

6

7

8

9

10  

0.01  

0.1  

1

10  

100  

V

GS

– Gate-Source Voltage (V)  

V

DS

– Drain-Source Voltage (V)  

Thermal Transient Impedance  

Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse  

1

0.1  

0.01  

Single Pulse  

R

θ

JC

=

0.8°C/W  

0.001  

1E-05  

0.0001  

0.001  

0.01  

0.1  

1

Square Wave Pulse Duration (sec)  

Ruichips Semiconductor Co., Ltd  

Rev. A– JAN., 2015  

4

RU8590S  

T

T

i l

 

C

h

harac

t

t i

 

ti  

ypical eristics  

Output Characteristics  

Drain-Source On Resistance  

180  

150  

120  

90  

20  

18  

15  

13  

10  

8

8,9,10V  

6V  

5V  

4V  

60  

V

GS

=10V  

5

30  

3V  

3

0

0

0

1

2

3

4

5

0

30  

60  

90  

120  

V

DS

– Drain-Source Voltage (V)  

I

D

– Drain Current (A)  

Drain-Source On Resistance  

Source-Drain Diode Forward  

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

100  

10  

1

V

GS

=10V  

I

D

=45A  

T

J

=175°C  

T

J

=25°C  

T

J

=25°C  

Rds(on)=5.8m

Ω

 

0.1  

0.2  

0.4  

0.6  

0.8  

1

1.2  

1.4  

-50 -25  

0

25  

50  

75 100

 

125 150 175  

V

SD

– Source-Drain Voltage (V)  

T

J

– Junction Temperature (

°

C)  

Capacitance  

Gate Charge  

6000  

5400  

4800  

4200  

3600  

3000  

2400  

1800  

1200  

600  

10  

9

8

7

6

5

4

3

2

1

0

V

DS

=68V  

I

DS

=45A  

Frequency=1.0MHz  

Ciss  

Coss  

Crs  

s

0

1

10  

100  

0

20  

40  

60  

V

DS

– Drain-Source Voltage (V)  

Q

G

– Gate Charge (nC)  

Ruichips Semiconductor Co., Ltd  

Rev. A– JAN., 2015  

5

RU8590S  

A l

 

h T

 

t Ci

 

it d

 

W f  

Avalanche Test Circuit and Waveforms  

Switching Time Test Circuit and Waveforms  

Ruichips Semiconductor Co., Ltd  

Rev. A– JAN., 2015  

6

RU8590S  

P

P

ack  

k

age I  

I

nf  

f

ormat  

t

i

i

on  

TO263  

θ

1

θ

1

θ

2

θ

θ

2  

MM  

NOM  

INCH  

NOM  

MM  

NOM  

INCH  

SYMBOL  

SYMBOL  

MIN  

4.40  

0.00  

2.59  

0.76  

1.22  

0.33  

1.22  

8.60  

9.95  

MAX  

MIN  

MAX  

MIN  

1.94  

1.17  

*

MAX  

2.60  

1.40  

1.70  

MIN  

0.076  

0.046  

*

NOM  

0.091  

0.051  

*

0.01 BSC  

0.098 REF  

*

MAX  

0.102  

0.055  

0.067  

A

A1  

A2  

b

4.55  

4.72  

0.25  

2.79  

0.90  

1.36  

0.47  

1.32  

9.29  

10.26  

0.173  

0.000  

0.102  

0.030  

0.048  

0.013  

0.048  

0.339  

0.392  

0.179  

0.186  

0.010  

0.110  

0.035  

0.054  

0.019  

0.052  

0.366  

0.404  

L

L3  

2.30  

0.10  

0.005  

1.29  

2.69  

0.106  

L1  

*

0.25 BSC  

2.50 REF  

*

*

*

*

*

*

*

*

*

*

L4  

b1  

c

L2  

0°  

5°  

*

8°  

9°  

0°  

5°  

8°  

9°  

θ

c1  

D

7°  

7°  

θ1  

θ2  

DEP  

Φp1  

1°  

3°  

5°  

1°  

3°  

5°  

E

*

*

0.05  

1.40  

0.10  

1.50  

0.20  

1.60  

0.002  

0.055  

0.004  

0.059  

0.008  

0.063  

2.54BSC  

0.100BSC  

e

H

14.70  

15.10  

15.79  

0.579  

0.594  

0.622  

Ruichips Semiconductor Co., Ltd  

Rev. A– JAN., 2015  

7

RU8590S  

C t

 

S i  

Customer Service  

Worldwide Sales and Service:  

Technical Support:  

Investor Relations Contacts:  

Marcom Contact:  

Editorial Contact:  

HR Contact:  

Legal Contact:  

Shen Zhen RUICHIPS Semiconductor CO., LTD  

Room 501, the 5floor An Tong Industrial Building,  

NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA  

TEL:

(86-755) 8311-5334  

FAX:

(86-755) 8311-4278  

E-mail:

Ruichips Semiconductor Co., Ltd  

Rev. A– JAN., 2015  

8