Shenzhen-ruichips-Semicon-RUH60100M
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RUH60100M
N-Channel Advanced Power MOSFET
Features
Pin Description
• 60V/100A,
R
DS (ON)
=2.6m
Ω
(Typ.)@V
GS
=10V
D
D
D
D
R
DS (ON)
=3.6m
Ω
(Typ.)@V
GS
=4.5V
• Ultra Low On-Resistance
• Fast Switching Speed
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
G
S
S
S
PIN1
PIN1
PDFN5060
D
Applications
• LED backlighting
• On board power for server
• Synchronous rectification
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
60
±20
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
150
°C
°C
A
T
STG
I
S
-55 to 150
50
T
C
=25°C
Mounted on Large Heat Sink
①
300
μ
s Pulse Drain Current Tested
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
400
100
63
A
A
I
DP
Continuous Drain Current@T
C
(V
GS
=10V)
②
I
D
38
③
Continuous Drain Current@T
A
(V
GS
=10V)
Maximum Power Dissipation@T
C
30
126
50
P
D
W
4.2
2.7
③
Maximum Power Dissipation@T
A
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2017
1
RUH60100M
Parameter
Symbol
Rating
Unit
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
R
JC
0.99
30
°C/W
°C/W
③
R
JA
Drain-Source Avalanche Ratings
④
Avalanche Energy, Single Pulsed
506
mJ
E
AS
Electrical Characteristics
(T
C
=25°C Unless Otherwise Noted)
RUH60100M
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
V
GS
=0V, I
DS
=250µA
V
DS
=60V, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
60
V
1
30
3
I
DSS
Zero Gate Voltage Drain Current
µA
T
J
=125°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=4.5V, I
DS
=35A
V
GS
=10V, I
DS
=50A
V
GS(th)
I
GSS
Gate Threshold Voltage
Gate Leakage Current
1
V
±100
4
nA
3.6
2.6
m
Ω
m
Ω
⑤
R
DS(ON)
Drain-Source On-state Resistance
3
Diode Characteristics
⑤
V
SD
I
SD
=50A, V
GS
=0V
Diode Forward Voltage
1.2
V
t
rr
Reverse Recovery Time
29
ns
nC
I
SD
=50A, dl
SD
/dt=100A/µs
Q
rr
Reverse Recovery Charge
118
⑥
Dynamic Characteristics
V
GS
=0V,V
DS
=0V,F=1MHz
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
Gate Resistance
1.2
5680
1450
85
Ω
V
GS
=0V,
V
DS
=30V,
Frequency=1.0MHz
Input Capacitance
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
13
9
V
DD
=30V,I
DS
=50A,
ns
V
GEN
=10V,R
G
=4.7
Ω
t
d(OFF)
t
f
68
Turn-off Fall Time
18
⑥
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
109
21
V
DS
=48V, V
GS
=10V,
I
DS
=50A
nC
31
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2017
2
RUH60100M
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable
junction temperature.
The package limitation current is 50A.
Notes:
③When mounted on 1 inch square copper board, t≤10sec.
④Limited by TJmax, IAS =45A, VDD = 48V, RG = 50Ω, Starting TJ = 25°C.
⑤Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑥Guaranteed by design, not subject to production testing.
Ordering and Marking Information
Device
Marking
Package
Packaging Quantity
Reel Size
Tape width
RUH60100M
RUH60100M
PDFN5060
Tape&Reel
3000
13”
12mm
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2017
3
RUH60100M
Typical Characteristics
Power Dissipation
Drain Current
140
120
100
80
120
100
80
60
40
20
0
60
40
20
VGS=10V
50
0
0
25
50
75
100
125
150
25
75
100
125
150
T
J
– Junction Temperature (
°
C)
T
J
– Junction Temperature (
°
C)
Drain Current
10
8
Safe Operation Area
1000
Ids=50A
100
10
1
10µs
100µs
1ms
6
DC
10ms
4
2
T
C
=25°C
0
0.1
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
1
10
100
1000
V
GS
– Gate-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
Thermal Transient Impedance
10
1
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
0.1
0.01
Single Pulse
R
θ
JC
=0.99
°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2017
4
RUH60100M
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
200
150
100
50
10
8
VGS=10V
，
8V
，
7V
5V
6
4.5V
10V
3V
2V
4
2
0
0
0
1
2
3
4
5
0
20
40
60
80
100
V
DS
– Drain-Source Voltage (V)
I
D
– Drain Current (A)
Drain-Source On Resistance
Source-Drain Diode Forward
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
V
GS
=10V
I
DS
=50A
T
J
=150°C
T
J
=25°C
T
J
=25°C
Rds(on)=2.6m
Ω
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100 125 150
V
SD
– Source-Drain Voltage (V)
Gate Charge
T
J
– Junction Temperature (
°
C)
Capacitance
10
9
8
7
6
5
4
3
2
1
0
8000
6000
4000
2000
0
VDS=48V
IDS=50A
Frequency=1.0MHz
Ciss
Coss
Crss
1
10
100
0
50
100
150
V
DS
– Drain-Source Voltage (V)
Q
G
– Gate Charge (nC)
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2017
5
RUH60100M
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2017
6
RUH60100M
Package Information
PDFN5060
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2017
7
RUH60100M
Customer Service
Worldwide Sales and Service:
Technical Support:
Investor Relations Contacts:
Marcom Contact:
Editorial Contact:
HR Contact:
Legal Contact:
Shen Zhen City RUICHIPS Semiconductor CO., LTD
4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park,
Nanshan District, Shenzhen, CHINA
TEL:
(86-755) 8311-5334
FAX:
(86-755) 8311-4278
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2017
8
