Shikues-2N7002G

2N7002G  

N-Channel Enhancement Mode Field Effect Transistor  

Features  

● Trench Power MV MOSFET technology  

● Voltage controlled small signal switch  

● Low input Capacitance  

3

● Fast Switching Speed  

● Low Input / Output Leakage  

Applications  

● Battery operated systems  

● Solid-state relays  

● Direct logic-level interface

：

TTL/CMOS  

2

1

Quick reference  

● V

DS  

60V  

● I

D  

340mA  

● R

DS(ON)

( at V

GS

=10V)  

● R

DS(ON)

( at V

GS

=4.5V)  

＜

2.5ohm  

＜

3.0ohm  

Pin Description  

Pin Description  

Simplified Outline  

Symbol  

D

1 Gate(G)  

2 Source(S)  

3 Drain(D)  

G

S

Absolute Maximum Ratings

(T =25

℃

unless otherwise noted)  

■

A

Parameter  

Symbol  

Limit  

60  

Unit  

V

Drain-source Voltage  

Gate-source Voltage  

Drain Current  

V

DS  

V

GS  

±

30  

V

T

A

=25

℃

@ Steady State  

T

A

=70

℃

@ Steady State  

340  

272  

I

D  

mA  

A

Pulsed Drain Current

A  

Total Power Dissipation @ T

A

=25

℃  

I

DM  

1.5  

350  

357  

P

D  

mW  

℃

/

W  

℃

Thermal Resistance Junction-to-Ambient @ Steady State

B  

Junction and Storage Temperature Range  

R

θJA  

T

J

,T

STG  

-55

～

+150  

REV.08  

1 of

5

 

2N7002G  

Electrical Characteristics ( TA = 25

 

°

C Unless Otherwise Noted )  

Parameter  

Static Parameter  

Symbol  

Conditions  

Min  

Typ  

Max  

Units  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

BV

DSS  

I

DSS  

V

GS

= 0V, I

D

=250μA  

V

DS

=60V,V

GS

=0V  

60  

V

1

μA  

nA  

nA  

V

I

GSS1  

I

GSS2  

V

GS(th)  

V

GS

=

±

30V, V

DS

=0V  

V

GS

=

±

20V, V

DS

=0V  

V

DS

= V

GS

, I

D

=250μA  

V

GS

= 10V, I

D

=300mA  

V

GS

= 4.5V, I

D

=200mA  

V

DS

=10 V, I

D

=200mA  

I

S

=300mA,V

GS

=0V  

±

100  

±

50  

2.5  

Gate-Body Leakage Current  

Gate Threshold Voltage  

1

1.6  

1.2  

1.3  

2.5  

Static Drain-Source On-Resistance  

R

DS(ON)  

Ω

3.0  

Forward Transconductance  

Diode Forward Voltage  

Maximum Body-Diode Continuous Current  

Dynamic Parameters  

Input Capacitance  

gfs  

V

SD  

I

S  

80  

ms  

V

1.2  

340  

mA  

C

iss  

C

oss  

C

rss  

27.5  

2.75  

1.9  

Output Capacitance  

V

DS

=30V,V

GS

=0V,f=1MHZ  

pF  

nC  

ns  

Reverse Transfer Capacitance  

Switching Parameters  

T

o

tal Gate Charge  

Q

g  

Q

gs  

Q

gd  

Q

rr  

t

rr  

1.6  

0.47  

0.25  

2.5  

Gate-Source Charge  

V

GS

=10V,V

DS

=30V,I

D

=0.3A  

I

F

=0.3A, di/dt=-100A/us  

Gate-Drain Charge  

Reverse Recovery Charge  

Reverse Recovery Time  

Turn-on Delay Time  

11.5  

3.3  

t

D(on)  

t

r  

t

D(off)  

t

f  

Turn-on Rise Time  

19  

V

GS

=10V,V

DD

=30V, I

D

=300mA,  

R

GEN

=6Ω  

Turn-off Delay Time  

9.6  

Turn-off fall Time  

49  

A. Pulse Test: Pulse Width

≤

300us,Duty cycle

≤

2%.  

B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.  

REV.08  

2 of

5

 

2N7002G  

■ Typical Performance Characteristics  

Figure1. Output

 

Characteristics  

Figure2. Transfer

 

Characteristics  

Figure3. Capacitance

 

Characteristics  

Figure4. Gate Charge  

Figure5. Drain-Source on Resistance  

Figure6. Drain-Source on Resistance  

REV.08  

3 of

5

 

2N7002G  

Figure7. Safe Operation Area  

Figure8. Switching wave  

REV.08  

4 of

5

 

2N7002G  

Package Dimensions  

SOT-23  

REV.08  

5

of

5