Shikues-2N7002K

2N7002K  

N-Channel Enhancement Mode MOSFET  

Feature  

ꢀ

60V/0.5A, R

DS(ON)

= 2000m

Ω

(MAX) @V

GS

= 10

V

.

I

d = 0.5A  

R

DS(ON)

= 2500m

Ω

(MAX) @V

GS

= 4.5

V

.

I

d = 0.2A  

R

DS(ON)

= 4500m

Ω

(MAX) @V

GS

= 2.5

V

.

I

d = 0.1A  

ꢀ

ꢀ

ꢀ

Super High dense cell design for extremely low R

DS(ON) .  

Reliable and

 

Rugged.  

SO

T

–

23  

≧

ESD Protection

 

: HBM

 

1.5K  

V

ꢀ

SO

T

–

23 for Surface Mount Package.  

A

pplications  

●

Power Management in Desktop Computer or DC/DC Converters .  

Absolute Maximum Ratings  

Parameter  

T

A

=25

℃

Unless Otherwise noted  

Symbol  

V

DS  

Limit  

60  

Units  

Drain-Source

V

o

ltage  

V

V

A

Gate-Source

V

o

ltage  

V

GS  

±

20  

0.5  

Drain Current-Continuous  

I

D  

Electrical Characteristics  

Parameter  

T

A

=25

℃

Unless Otherwise noted  

Symbol  

T

e

st Conditions  

Min  

Typ.  

Max  

Units  

Off Characteristics  

Drain to Source Breakdown

V

o

ltage  

Zero-Gate

V

o

ltage Drain Current  

Gate Body Leakage Current, Forward  

Gate Body Leakage Current, Reverse  

BVDSS  

IDSS  

VGS=0

V

,

I

D=10µA  

VDS=60

V

,

V

GS=0V  

VGS=20

V

,

V

DS=0V  

VGS=-20

V

,

V

DS=0V  

60  

–

–

–

–

–

–

1

V

µA  

µA  

µA  

IGSSF  

IGSSR  

–

10  

-10  

–

On Characteristics  

Gate Threshold

V

o

ltage  

Static Drain-source  

On-Resistance  

VGS(th)  

VGS= VDS, ID=250

µ

A  

VGS =10

V

,

I

D =0.5A  

VGS =4.5

V

,

I

D =0.2A  

VGS =2.5

V

,

I

D =0.1A  

0.85  

1.2  

1200  

1400  

–

2.5  

V

–

–

–

2000  

2500  

4500  

m

Ω  

m

Ω  

m

Ω  

RDS(ON)  

Drain-Source Diode Characteristics and Maximum Ratings  

Drain-Source Diode Forward

V

o

ltage  

VSD  

VGS =0

V

,

I

S=0.2A  

1.5  

V

REV.08.1  

1 of 3  

2N7002K  

Typical Characteristics  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0

0.8  

0.7  

VGS=4

，

4.5

，

5

，

6

，

7

，

8

～

10V  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0

VGS=3V  

Tj

＝

125

℃  

Tj

＝

25

℃  

VGS=2.0V  

0

1

2

3

4

5

0

1

2

3

4

5

VDS,Drain-to-Source Voltage(Volts)  

VGS,Gate-to-Source Voltage(Volts)  

Figure 1

．

Output Characteristics  

Figure 2

．

Transfer Characteristics  

72  

71  

1.7  

ID=250uA  

I

D=250uA  

1.6  

1.5  

1.4  

1.3  

1.2  

1.1  

70  

69  

68  

67  

66  

65  

64  

63  

62  

0

50  

100  

150  

200  

0

50  

100  

150  

200  

Tj.Junction Temperature(℃)  

Tj.Junction Temperature(℃)  

Figure 3

．

Breakdown Voltage Variation  

Figure 4

．

Gate Threshold

V

a

riation  

with

T

e

mperature  

with

T

e

mperature  

REV.08.1  

2 of 3  

2N7002K  

Typical Characteristics  

9

8

7

10  

9

8

7

6

5

4

3

2

1

0

6

10V/0.5A  

VGS=4.5V  

VGS=10V  

5

4

3

2

1

0

4.5V/0.2A  

0

50  

100  

150  

200  

0

0.2  

0.4  

0.6  

0.8  

1

Tj.Junction Temperature(℃)  

ID-Drain Current(A)  

Figure 5

．

On-Resistance

V

a

riation  

Figure 6

．

On-Resistance vs. Drain Current  

with Temperature  

12  

10  

8

10  

Tj

＝

150

℃  

6

1

ID=0.5A  

4

Tj

＝

25

℃  

ID=0.2A  

2

0

0.1  

0

2

4

6

8

10  

0

0.5  

1

1.5  

2

2.5  

VGS,Gate-to-Source Voltage(Volts)  

VSD-Source-to-Drain Voltage(V)  

Figure 7

．

On-Resistance vs. Gate-to-Source  

Figure 8

．

Source-Drain Diode Forward  

V

o

ltage  

V

o

ltage  

REV.08.1  

3 of 3