Shikues-2N7002T

Part #Shikues-2N7002T
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Shikues-2N7002T
2N7002T  
150mW SOT-523 SURFACEMOUNT  
Plastic Package  
N-Channel MOSFET  
Green Product  
3
Absolute Maximum Ratings  
T

A

= 25°C unless otherwise noted  
Value  
Symbol  
Parameter  
Units  
2
V

DS  

V

GS  

I

D  

Drain-Source Voltage  
60  
V
V
1.
Gate  
2. Source  
3.
Drain  
±
20V  
Continuous Gate-Source Voltage  
Continuous Drain Current  
1
115  
mA  
mW  
°C /W  
°C  
SOT-523  
P

D  

Power Dissipation  
150  
833  
R

θJA  

T

STG  

T

J  

Thermal Resistance from Junction to
 
Ambient  
Storage Temperature Range  
Operating Junction Temperature  
-55 to +150  
+150  
°C  
These ratings are limiting values above which the serviceability of the device may be impaired.  
Specification Features:  
Electrical Symbol:  
Devic
e
M
arkin
g
C
ode:  
□
D
Low On-resistance  
□
Low Gate Threshold Voltage  
K72  
□
□
Low Input
 
capacitance  
ES
D
P
rotecte
d
u
p
t
o
1
k
V
(
HBM)  
G
S
□
□
□
□
RoHS Compliant  
Gree
n
E
MC  
Matte Tin(Sn) Lead Finish  
Weight: approx.
 
0.002g  
1 of 3  

2N7002T  
Electrical Characteristics
(T

A

= 25°C unless otherwise
 
noted)  
Off Characteristics  
Limits  
Unit  
Symbol  
Parameter  
Test Condition  
Min  
60  
Typ  
Max  
BV

DSS  

I

GSS  

Drain-Source Breakdown Voltage  
Gate-Body Leakage  
V

GS

=0V, I

D

=10uA  
Volts  
uA  
V

DS

=0V, V

GS

=±
20V  
±
1  
V

DS

=60V, V

GS

=
0V  
I

DSS  

Zero Gate Voltage Drain Current  
±5  
u
A  
On Characteristics  
Symbol  
Limits  
Typ  
Parameter  
Test Condition  
Unit  
Min  
1
Max  
2.5  
V

th(GS)  

I

D(ON)  

V

DS

= V

GS

, I

D

=250uA  
V

GS

=10V, V

DS

=7V  
V

GS

=10V, I

D

=500mA  
Gate-Threshold Voltage  
On-state Drain Current  
Volts  
mA  
Ω
500  
R

DS(on)  

Drain-Source On-Resistance  
7.5  
V

GS

=5V, I

D

=50mA  
7.5  
Ω
g

fs  

Forward Trans Conductance  
Drain-Source On-Voltage  
V

DS

=10V, I

D

=200mA  
80  
500  
ms  
V

DS(on)  

V

GS

=10V, I

D

=500mA  
V

GS

=5V, I

D

=50mA  
3.75  
0.375  
1
V
V
V
I

S

=250mA, V

GS

=
0V  
V

SD  

Diode Forward Voltage  
Dynamic Characteristics  
Symbol  
Limits  
Typ  
Parameter  
Test Condition  
Unit  
Min  
—  
Max  
50  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
—  
—  
—  
pF  
pF  
pF  
V

DS

= 25V, V

GS

= 0V,  
f = 1.0MHz  
—  
25  
—  
5.0  
Switching Characteristics  
Limits  
Typ  
Symbol  
Parameter  
Test Condition  
Unit  
Min  
—  
Max  
—  
t

D(on)  

t

D(off)  

V

DD

=10V, R

L

=20Ω,  
I

D

=500mA, V

GEN

=10V,  
R

G

= 10Ω  
Turn-on Time  
Turn-off Time  
5.6  
25  
nS  
nS  
—  
—  
2
of 3  

2N7002T  
SOT-523 Package Outline  
MILLIMETERS  
MIN  
INCHES  
DIM  
MAX  
0.90  
0.10  
0.80  
0.25  
0.35  
0.20  
1.70  
0.90  
1.75  
MIN  
MAX  
0.035  
0.004  
0.031  
0.010  
0.014  
0.008  
0.067  
0.035  
0.069  
A
A1  
A2  
b1  
b2  
c
0.70  
0.00  
0.70  
0.15  
0.25  
0.10  
1.50  
0.70  
1.45  
0.028  
0.000  
0.028  
0.006  
0.010  
0.004  
0.059  
0.028  
0.057  
D
E
E1  
e
0.50 TYP.  
0.020 TYP.  
Typical Soldering Pattern:  
e1  
L
0.90  
1.10  
0.035  
0.043  
0.40 REF.  
0.016 REF.  
L1  
0.10  
0

O  

0.30  
8

O  

0.004  
0

O  

0.012  
8

O  

θ
NOTES:  
1.
Above package outline conforms to JEITA EAIJ ED-7500A
 
SC-75A.  
2.
Dimensions are exclusive of Burrs, Mold Flash & Tie Bar
 
extrusions.  
3
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