Shikues-2SA1576AR

2SA1576AR  

PNP Silicon Epitaxial Planar Transistor  

The transistor is subdivided into three groups Q, R  

and S according to its DC current gain.  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

Symbol  

-V

CBO  

-V

CEO  

-V

EBO  

-I

C  

Value  

Unit  

V

60  

50  

V

6

150  

V

Collector Current  

mA  

mW  

Power Dissipation  

P

tot  

200  

O

Junction Temperature  

Storage Temperature Range  

T

j  

150  

C

O

C

T

stg  

– 55 to + 150  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Typ.  

Max.  

Unit  

DC Current Gain  

at -V

CE

= 6 V, -I

C

= 1 mA

 

Current Gain Group  

Q

R

S

h

FE  

h

FE  

h

FE  

120  

180  

270  

–

–

–

270  

390  

560  

–

–

–

Collector Base Cutoff Current  

at -V

CB

= 60 V  

-I

CBO  

-I

EBO  

–

–

–

0.1  

µA  

µA  

V

Emitter Base Cutoff Current  

at -V

EB

= 6 V  

–

0.1  

Collector Base Breakdown Voltage  

at -I

C

= 50 µA  

-V

(BR)CBO  

-V

(BR)CEO  

-V

(BR)EBO  

-V

CE(sat)  

f

T  

60  

50  

6

–

–

–

–

Collector Emitter Breakdown Voltage  

at -I

C

= 1 mA  

–

V

Emitter Base Breakdown Voltage  

at -I

E

= 50 µA  

–

–

V

Collector Emitter Saturation Voltage  

at -I

C

= 50 mA, -I

B

= 5 mA  

–

140  

–

0.5  

–

V

Transition Frequency  

at -V

CE

= 12 V, -I

E

= 2 mA, f = 30 MHz  

–

MHz  

pF  

Collector Output Capacitance  

at -V

CB

= 12 V, f = 1 MHz  

C

ob  

–

5

CLASSIFICATION OF h

FE(1)  

Q

12

0

–

270  

FQ  

R

S

RANK  

RANGE  

180

–

390  

270

–

560  

FS  

MARKING  

FR  

REV.08  

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2SA1576AR  

Fig.2 Grounded

 

emitter output characteristics(

 

)  

Fig.1 Grounded

 

emitter propagation characteristics  

–35.0  

–50  

–10  

V

CE

= –10 V  

T

A

= 100°C  

T

A

= 25°C  

–31.5  

25°C  

– 40°C  

–20  

–28.0  

–8  

–10  

–24.5  

–50  

–21.0  

–6  

–17.5  

–2  

–1  

–14.0  

–4  

–10.5  

–0.5  

–7.0  

–2  

–3.5

µ

A  

–0.2  

–0.1  

I

0

0

–0.4  

–0.8  

–1.2  

–1.6  

–2.0  

–0.2  

–0.4  

–0.6  

–0.8  

–1.0  

–1.2  

–1.4  

–1.6  

V

CE

, COLLECTOR TO EMITTER VOLTAGE (V)  

V

BE

, BASE TO EMITTER VOLTAGE(V)  

Fig.3 Grounded

 

emitter output characteristics(

 

)  

Fig.4 DC

 

current gain vs. collector current (

 

)  

–100  

500  

T

A

= 25°C  

V

CE

= –5 V  

–3V  

T

A

= 25°C  

500  

450  

–1V  

–80  

400  

350  

300  

200  

100  

–250  

–60  

–200  

–40  

–20  

0

–150  

–100  

–50

µ

A  

I

B

=0  

50  

0

–1  

–2  

–3  

–4  

–5  

–0.2  

–0.5  

–1  

–2  

–5  

–10  

–20  

–50  

–100  

V

CE

, COLLECTOR TO EMITTER VOLTAGE (V)  

I

C

, COLLECTOR CURRENT (mA)  

Fig.6 Collector-emitter

 

saturation voltage vs.  

collector current (

 

)  

Fig.5 DC

 

current gain vs. collector current (

 

)  

–1  

500  

T

A

= 25°C  

T

A

= 100°C  

25°C  

–0.5  

–40°C  

200  

–0.2  

I

C

/I

B

= 50  

100  

20  

–0.1  

10  

50  

–0.05  

V

CE

= – 6V  

–0.2  

–0.5  

–1  

–2  

–5  

–10  

–20  

–50  

–100  

–0.2  

–0.5  

–1  

–2  

–5  

–10  

–20  

–50  

–100  

I

C

, COLLECTOR CURRENT (mA)  

I

REV.08  

2 of 4  

2SA1576AR  

Fig.7 Collector-emitter

 

saturation voltage vs.  

collector current (

 

)  

Fig.8 Gain

 

bandwidth product vs. emitter current  

1000  

–1  

T

A

= 25°C  

I

C

/I

B

= 10  

V

CE

= –12V  

–0.5  

500  

200  

100  

–0.2  

T

A

= 100°C  

25°C  

–40°C  

–0.1  

–0.05  

50  

–0.2  

–0.5  

–1  

–2  

–5  

–10  

–20  

–50  

–100  

–0.2  

–0.5  

–1  

–2  

–5  

–10  

–20  

–50  

–100  

I

E

, EMITTER CURRENT (mA)  

I

C

, COLLECTOR CURRENT (mA)  

Fig.9 Collector

 

output capacitance vs.collector-base voltage  

Emitter inputcapacitance vs. emitter-base voltage  

20  

T

A

= 25°C  

f =1MHz  

I

E

= 0A  

C

ib  

10  

I

C

ob  

5

2

–0.5  

–1  

–2  

–5  

–10  

–20  

V

CB

, COLLECTOR TO BASE VOLTAGE (V)  

V

EB

, EMITTER TO BASE VOLTAGE (V)  

REV.08  

3 of 4  

2SA1576AR  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min.  

0.900  

0.000  

0.900  

0.200  

0.080  

2.000  

1.150  

2.150  

Max.  

1.100  

0.100  

1.000  

0.400  

0.150  

2.200  

1.350  

2.450  

Min.  

0.035  

0.000  

0.035  

0.008  

0.003  

0.079  

0.045  

0.085  

Max.  

0.043  

0.004  

0.039  

0.016  

0.006  

0.087  

0.053  

0.096  

A

A1  

A2  

b

c

D

E

E1  

e

e1  

L

0.650 TYP.  

0.525 REF.  

0.026 T

Y

P

.  

0.021 REF.  

1.200  

1.400  

0.047  

0.055  

L1  

θ

0.260  

0°  

0.460  

8°  

0.010  

0°  

0.018  

8°  

REV.08  

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