Shikues-2SB1188R

2SB1188  

PNP-

Silicon General use Transistors  

1W

、

1.5A

、

25V  

Applications

：

Can be used for switching and amplifying in various  

4

electrical and electronic circuit.  

3

2

1

2

1

3

Maximum ratings  

SOT-89  

1 Base

 

2 Collector

 

3 Emitter  

Parameters  

Symbol  

V

CEO  

V

CBO  

V

EBO  

I

C  

Rating  

25  

Unit  

V

Collector-emitter voltage (I

B

=0)  

Collector-base voltage

（

I

E

=0

）  

Emitter-base voltage

（

I

C

=0

）  

Collector current  

40  

V

V

A

6

1.5  

Total  

dissipation  

W

P

tot  

1

power(T

A

=25

℃

)

*  

Junction temperature  

Storage temperature  

T

jm  

T

stg  

150  

℃

℃

-55

～

150  

* Device is mounted on a printed circuit board.  

Electrical characteristics

（

Unless otherwise specified

，

T

A

=25

℃）  

Parameters  

Symbol  

V

(BR)CEO  

V

(BR)CBO  

V

(BR)EBO  

Test condition  

Min.  

Max.  

—

Unit  

V

I

C

=2mA

，

I

B

=0  

25  

Collector-emitter breakdown voltage  

Collector-base breakdown voltage  

Emitter-base breakdown voltage  

I

C

=100µA

，

I

E

=0  

I

E

=100µA

，

I

C

=0  

40  

—

V

6

—

V

120  

180  

—

270  

390  

100  

0.5  

—

—

Q

Forward current  

V

CE

=1V

；

I

C

=100mA  

h

FE  

transfer ratio  

R

—

V

CB

=35V

，

I

E

=0  

nA  

V

Collector-base current  

I

CBO  

I

C

=800mA

，

I

B

=80mA  

—

Collector-emitter saturation voltage  

Characteristic frequency  

V

CE  

（

）

sat  

I

C

=50mA

，

V

CE

=10V

，  

f=100MHz  

200  

MHz  

f

T  

REV.08  

1 of 3  

2SB1188  

Typical characteristics  

REV.08  

2 of 3  

2SB1188  

Outline dimensions

（see fig.1）  

Unit

：

mm  

SOT-89  

type  

Dimensions  

Symbol  

min  

1.4  

0.35  

0.4  

max  

1.6  

0.55  

0.65  

A

b

b1  

b2  

c

1.6  

0.35  

4.4  

0.45  

4.6  

D

E

2.35  

2.55  

e

1.5  

3

4.15  

2.7  

1.0  

5o  

e1  

HE  

L

LE  

α

Fig.1 Outline

 

Dimensions  

REV.08  

3 of 3