Shikues-BC807-40

BC807  

BC807

TRANSISTOR(PNP)  

FEATURES  

ꢀ

ꢀ

ꢀ

Ideally Suited for Automatic Insertion  

Epitaxial Planar Die Construction  

For Switching, AF Driver and Amplifier  

Applications  

SOT-23  

3

．

COLLECTOR  

2

．

EMITTER  

1

．

BASE  

ꢀ

Complementary NPN Types Available (BC817)  

MARKING:

BC  

807-16:5A  

BC

807-25:5B  

BC

807-40:5C  

MAXIMUM RATINGS (T

A

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Value  

–

5

0  

Units  

V

V

CBO  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

V

CEO  

V

EBO  

I

C  

–

4

5  

V

-5  

V

Collector Current -Continuous  

Collector Power Dissipation  

Junction

T

e

mperature  

-0.

5  

A

P

C  

0.3  

W

℃

℃

T

j  

150  

T

stg  

Storage

T

e

mperature  

-55-150  

ELECTRICAL CHARACTERISTICS (Tamb=25

℃

unless otherwise specified)  

Symbol  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

Test conditions  

I

C

= -10µA,

 

I

E

=0  

I

C

=-1

0

mA, I

B

=0  

I

E

= -1µA,

 

I

C

=0  

MIN  

–

5

0  

–

4

5  

-5  

MAX UNIT  

Parameter  

V

V

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

I

CBO  

I

EBO  

V

CB

= -4

5

V

,

I

E

=0  

V

EB

= –

4

V

,

I

C

=0  

-0.1  

-0.1  

Collector cut-off current  

Emitter cut-off current  

µA  

µA  

h

FE(1)  

h

FE(2)  

h

FE(

3

)  

V

CE

= -1

V

,

 

I

C

= –

10

0mA  

V

CE

= -1

V

,

 

I

C

= –

1

00mA  

1

00  

16

0  

25

0  

2

50  

40

0  

60

0  

807-16  

807-25  

DC current gain  

V

CE

= -1

V

,

 

I

C

= –

1

00mA  

807-40  

V

CE

(sat)  

I

C

=-500mA, I

B

= -50mA  

-0.

7

 

V

V

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

V

I

C

=-500mA, I

B

= -50mA  

V

CE

= –

5

V

,

I

C

= –

1

0mA  

f=

10

0MHz  

-1.2  

1

0

0  

MHz  

Transition frequency  

f

T  

REV.08  

1 of 3  

BC807  

400  

1000  

See Note 1  

T

A

= 25

°

C  

f = 20MHz  

300  

200  

100  

0

-V

CE

= 5.0V  

1.0V  

100  

10  

1

10  

100  

1000  

0

100  

200  

-I

C

, COLLECTOR CURRENT (mA)  

T

SB

, SUBSTRATE TEMPERATURE (

°

C)  

Fig. 1,

 

Power Derating Curve  

Fig. 2,

 

Gain-Bandwidth Product vs Collector Current  

-V

CE

= 1V  

0.5  

0.4  

0.3  

1000  

100  

10  

typical  

limits  

at T

A

= 25

°

C  

150

°

C  

-I

C

/ -I

B

= 10  

25

°

C  

-50

°

C  

0.2  

0.1  

25

°

C  

150

°

C  

-50

°

C  

0

0.1  

1

10  

1000  

0.1  

1

10  

100  

100  

1000  

-I

C

, COLLECTOR CURRENT (mA)  

Fig. 3,

 

Collector Sat. Voltage vs Collector Current  

-I

C

, COLLECTOR CURRENT (mA)  

Fig. 4,

 

DC Current Gain vs Collector Current  

500  

400  

300  

100  

80  

3.2  

2.8  

0.35  

0.3  

2.4  

2

1.8  

1.6  

1.4  

0.25  

60  

40  

0.2  

1.2  

0.8  

0.15  

200  

100  

0

0.6  

0.4  

0.1  

20  

0

-I

B

= 0.05mA  

-I

B

= 0.2mA  

0

10  

0

1

2

20  

-V

CE

, COLLECTOR-EMITTER VOLTAGE (V)  

-V

CE

, COLLECTOR-EMITTER VOLTAGE (V)  

Fig. 5,

 

Typical Emitter-Collector Characteristics  

Fig. 6,

 

Typical Emitter-Collector Characteristics  

REV.08  

2 of 3  

BC807  

PACKAGE OUTLINE  

Plastic surface mounted package; 3 leads  

SOT-23  

REV.08  

3 of 3