Shikues-BC856BW

BC856W THRU BC858W  

-323 Plastic-Encapsulate Transistors  

SOT  

TRANSISTOR (PNP)  

BC856W  

BC857W  

BC858W  

FEATURES  

y

y

Ideally suited for automatic insertion  

For Switching and AF Amplifier Applications  

SOT-323  

1. BASE  

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)  

2. EMITTER  

3. COLLECTOR  

Symbol  

Parameter  

Collector-Base Voltage  

Value  

Unit  

BC856W  

BC857W  

BC858W  

-80  

-50  

-30  

V

CBO  

V

Collector-Emitter Voltage  

BC856W  

BC857W  

BC858W  

-65  

-45  

V

CEO  

V

-30  

V

EBO  

I

C  

Emitter-Base Voltage  

-5  

V

A

Collector Current –Continuous  

Collector Power Dissipation  

Junction

T

e

mperature  

-0.1  

150  

P

C*  

T

J  

mW  

150  

℃

T

stg  

Storage

T

e

mperature  

-65-150  

℃

DEVICE MARKING  

BC856AW=3A; BC856BW=3B;  

BC857AW=3E; BC857BW=3F;BC857CW=3G;  

BC858AW=3J; BC858BW=3K; BC858CW=3L  

REV.08  

1 of 4  

BC856W THRU BC858W  

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)  

Parameter  

Symbol  

T

e

st conditions  

Min  

Max  

Unit  

Collector-base breakdown voltage  

BC856W  

BC857W  

BC858W  

BC856W  

BC857W  

BC858W  

-80  

-50  

-30  

-65  

-45  

-30  

V

CBO  

I

C

= -10

μ

A, I

E

=0  

V

Collector-emitter breakdown voltage  

V

CEO  

I

C

= -10mA, I

B

=0  

V

Emitter-base breakdown voltage  

Collector cut-off current  

V

EBO  

I

CBO  

I

E

= -1

μ

A, I

C

=0  

-5  

V

V

CB

= -30 V , I

E

=0  

-15  

nA  

DC current gain  

BC856AW, 857AW,858AW  

BC856BW, 857BW,858BW  

BC857CW,BC858CW  

125  

220  

420  

250  

475  

800  

h

FE  

V

CE

= -5

V

,

I

C

= -2mA  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

V

CE(sat)  

V

BE(sat)  

I

C

=-100mA, I

B

= -5mA  

I

C

= -100mA, I

B

= -5mA  

-0.65  

-1.1  

V

V

V

CE

= -5

V

,

I

C

= -10mA  

f=100MHz  

Transition frequency  

Collector capacitance  

f

T  

100  

MHz  

pF  

C

ob  

V

CB

=-10

V

,

f

=1MHz  

4.5  

REV.08  

2 of 4  

BC856W THRU BC858W  

Typical Characteristics  

h

FE

—— I

C  

Static Characteristic  

-6  

-5  

-4  

-3  

-2  

-1  

-0  

500  

V

CE

=-5V  

-20uA  

COMMON  

EMITTER  

T

a

=25

℃

 

-18uA  

-16uA  

T

a

=100

℃  

T

a

=25

℃  

400  

300  

200  

100  

0

-14uA  

-12uA  

-10uA  

-8uA  

-6uA  

-4uA  

I

B

=-2uA  

-0  

-2  

-4  

-6  

-8  

-10  

-1  

-10  

-100  

-100  

150  

COLLECTOR-EMITTER VOLTAGE

 

V

CE

(V)  

COLLECTOR CURRENT

 

I

C

(mA)  

V

BEsat

—— I

C  

V

CEsat

—— I

C  

-1000  

-800  

-600  

-400  

-200  

-0  

-1000  

-100  

-10  

β

=20  

T

a

=25

℃  

T

a

=100

℃  

T

a

=25

℃  

T

a

=100

℃  

β

=20  

-0.1  

-1  

-10  

-100  

-0.1  

-1  

-10  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR CURRENT

 

I

C

(mA)  

C

ob

/ C

ib

——  

V

CB

/

V

EB  

P

C

—— T

a  

15  

180  

f=1MHz  

I

E

=0/I

C

=0  

150  

120  

90  

60  

30  

0

T

a

=25

℃  

12  

9

C

ib  

C

ob  

6

3

0

-0.1  

-1  

-10  

0

25  

50  

75  

100  

125  

REVERSE BIAS VOLTAGE  

V

(V)  

AMBIENT TEMPERATURE

 

T

a

(

℃

)  

REV.08  

3 of 4  

BC856W THRU BC858W  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min.  

0.900  

0.000  

0.900  

0.200  

0.080  

2.000  

1.150  

2.150  

Max.  

1.100  

0.100  

1.000  

0.400  

0.150  

2.200  

1.350  

2.450  

Min.  

0.035  

0.000  

0.035  

0.008  

0.003  

0.079  

0.045  

0.085  

Max.  

0.043  

0.004  

0.039  

0.016  

0.006  

0.087  

0.053  

0.096  

A

A1  

A2  

b

c

D

E

E1  

e

e1  

L

0.650 TYP.  

0.525 REF.  

0.026 T

Y

P

.  

0.021 REF.  

1.200  

1.400  

0.047  

0.055  

L1  

θ

0.260  

0°  

0.460  

8°  

0.010  

0°  

0.018  

8°  

REV.08  

4 of 4