Shikues-BCV27
| Part # | Shikues-BCV27 |
| Download | Shikues-BCV27 |
BCV27 / BCV47
NPN Darlington Transistors
for preamplifier input applications
SOT-23 Plastic Package
O
Absolute Maximum Ratings (T
a
= 25
C)
Parameter
Symbol
V
CBO
Value
Unit
V
BCV27
BCV47
BCV27
BCV47
40
80
30
60
Collector Base Voltage
Collector Emitter Voltage
V
CEO
V
Emitter Base Voltage
Collector Current
V
EBO
I
C
I
CM
I
B
10
500
V
mA
mA
mA
mW
Peak Collector Current
Base Current
800
100
T
o
tal Power Dissipation
Junction
T
e
mperature
Storage
T
e
mperature Range
P
tot
T
j
200
O
C
150
O
C
T
S
– 65 to + 150
O
Characteristics at T
a
= 25
C
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at V
CE
= 5
V
,
I
C
= 1 mA
BCV27
BCV47
BCV27
BCV47
BCV27
BCV47
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
4000
2000
10000
4000
20000
10000
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
at V
CE
= 5
V
,
I
C
= 10 mA
at V
CE
= 5
V
,
I
C
= 100 mA
Collector Cutoff Current
at V
CB
= 30 V
at V
CB
= 60 V
BCV27
BCV47
–
–
–
–
100
100
I
CBO
nA
nA
Emitter Cutoff Current
at V
EB
= 10 V
Collector Base Breakdown Voltage
at I
C
= 100 µA
Collector Emitter Breakdown Voltage
at I
C
= 10 mA
Emitter Base Breakdown Voltage
at I
E
= 10 µA
Collector Emitter Saturation Voltage
at I
C
= 100 mA, I
B
= 0.1 mA
Base Emitter Saturation Voltage
at I
C
= 100 mA, I
B
= 0.1 mA
Base Emitter On-state Voltage
at I
C
= 10 mA, V
CE
= 5 V
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
–
–
100
BCV27
BCV47
BCV27
BCV47
40
80
30
60
–
–
–
–
V
V
–
–
–
10
–
–
V
–
1
V
–
–
–
1.5
1.4
–
V
–
V
Transition Frequency
at V
CE
= 5
V
,
I
C
= 30 mA, f = 100 MHz
–
220
MHz
REV.08
1 of 2
BCV27 / BCV47
Power Dissipation vs Ambient Temperature
300
250
200
150
100
50
0
0
25
100
125
50
75
150
O
Ambient Temperature: Ta ( C)
REV.08
2 of 2
