Shikues-BSS123W
| Part # | Shikues-BSS123W |
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B
SS123W
N-Channel Enhancement Mode MOSFET
Feature
3
1
Super High dense cell design for extremely low R
DS(ON)
.
Reliable and Rugged.
Low Threshold Voltage (
1
.5V
—
2
.5 V)Make it Ideal for
Low Voltage Applications.
2
ESD protected.
SOT-
3
23 for Surface Mount Package.
Applications
Power Management in
DC/DC
Converters
Portable and Battery-powered Products.
Unless Otherwise noted
Absolute Maximum Ratings
TA=25
℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
Limit
Units
VDS
VGS
ID
V
V
A
10
0
±
20
0.
17
Drain Current-Continuous
z
Electrical Characteristics ( Ta = 25 °C Unless Otherwise Noted )
Symbol
Parameter
Conditions
Min Typ Max Unit
Static Characteristics
BV
DSS
V
GS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
GS
= 0 V,
I
DS
= 250
μ
A
V
DS
= V
GS
, I
DS
= 250
μ
A
V
DS
= 80 V, V
GS
= 0V
100
–
2.0
–
–
2.5
1
V
1.5
V
–
–
–
–
–
μ
A
μ
A
μ
A
I
DSS
I
GSS
Drain Leakage Current
Gate Leakage Current
On-State Resistance
–
30
± 10
6
T
J
= 85
℃
V
GS
= ±20 V, V
DS
= 0 V
V
GS
= 10 V, I
DS
= 0.25 A
V
GS
= 4.5 V, I
DS
= 0.2 A
–
3.5
4.5
a
R
DS(ON)
Ω
9
Diode Characteristics
V
SD
Diode Forward Voltage
I
SD
= 0.4 A, V
GS
= 0 V
–
1.3
V
0.91
REV.08
1
of
2
BSS123W
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.200
0.080
2.000
1.150
2.150
Max.
1.100
0.100
1.000
0.400
0.150
2.200
1.350
2.450
Min.
0.035
0.000
0.035
0.008
0.003
0.079
0.045
0.085
Max.
0.043
0.004
0.039
0.016
0.006
0.087
0.053
0.096
A
A1
A2
b
c
D
E
E1
e
e1
L
0.650 TYP.
0.525 REF.
0.026 T
Y
P
.
0.021 REF.
1.200
1.400
0.047
0.055
L1
θ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
REV.08
2
of
2
