Shikues-C111581

N-Channel Enhancement Mode MOSFET  

Features  

●

Surface-mounted package  

●

Extremely low threshold voltage  

●

Advanced trench cell design  

●

ESD protected ( HBM > 2KV )  

Applications  

3

●

Portable appliances  

2

Quick reference  

1

●

BV

≧

60 V  

Ptot

≦

0.83 W

 

ID

≦

0.43 A  

●

RDS(ON)

≦

3 Ω @ VGS = 10 V  

●

RDS(ON)

≦

4 Ω @ VGS = 4.5 V  

Pin Description  

Pin Description  

Simplified Outline  

Symbol  

1 Gate(G)  

2 Source(S)  

3 Drain(D)  

Limiting Values  

Notes

：

* Surface Mounted on 1 in

2

pad area, t

≤ 10 sec  

** Pulse width ≤ 300

μ

s, duty cycle ≤ 2 %  

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Electrical Characteristics ( TA = 25

 

°

C Unless Otherwise Noted )  

Notes

：

a : Pulse test ; pulse width ≤ 300

μ

s, duty cycle ≤ 2 %  

b : Guaranteed by design, not subject to production testing  

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Typical Characteristics  

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Package Dimensions  

SOT-23  

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