Shikues-KTC3875S-Y

KTC3875S  

NPN Silicon Epitaxial Planar Transistor  

For switching and AF amplifier applications.  

The transistor is subdivided into four groups  

O, Y, G  

and L, according to its DC current gain.  

1.Base 2.Emitter

 

3.Collector  

SOT-23 Plastic Package  

O

Absolute Maximum Ratings

(T

a

= 25

 

C)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

Unit  

V

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

Collector Current  

60  

50  

V

5

150  

V

mA  

mA  

mW  

Base Current  

I

B  

30  

Power Dissipation  

P

tot  

200  

O

Junction

T

e

mperature  

Storage

T

e

mperature Range  

T

j  

150  

C

O

C

T

S  

-55 to +150  

O

Characteristics at

T

amb

=25 C  

Symbol  

Min.  

Typ.  

Max.  

Unit  

DC Current Gain  

at V

CE

=6

V

, I

C

=2mA  

Current Gain Group  

O

Y

G

L

h

FE  

h

FE  

h

FE  

h

FE  

70  

–

–

–

–

140  

240  

400  

700  

–

–

–

–

120  

200  

300  

Collector Emitter Saturation Voltage  

at I

C

=100mA, I

B

=10mA  

Collector Cutoff Current  

at V

CB

=60V  

V

CE(sat)  

I

CBO  

I

EBO  

f

T  

–

–

–

–

–

–

0.25  

0.1  

0.1  

–

V

µA  

Emitter Cutoff Current  

at V

EB

=5V  

–

µA  

Transition Frequency  

at V

CE

=10

V

,

I

C

=1mA  

Collector Output Capacitance  

at V

CB

=10

V

,

f

=1MHz  

80  

MHz  

C

OB  

NF  

–

–

2

1

3.5  

10  

pF  

dB  

Noise Figure  

at V

CE

=6

V

, I

C

=0.1mA, f=1KHz, R

G

=10K

Ω

 

REV.08  

1 of 3  

KTC3875S  

I

C

-V

CE  

h

FE

-I

C  

3K  

1K  

280  

COMMON  

EMITTER  

COMMON

EMITTER  

Ta=25

o

C  

5.0  

240  

200  

6.0  

3.0  

500  

300  

2.0  

T

a

=100

o

C  

V

CE

=6V  

160  

120  

80  

T

a

=2

5

o

C  

o

1.0  

0.5  

=0.2mA  

T

a

=-25 C  

100  

50  

30  

I

B

V

CE

=1V  

100  

40  

0

10  

0

0.1  

0.3  

1

3

10  

30  

(mA)  

300  

0

1

2

3

4

5

6

COLLECTOR CURRENT  

I

C

COLLECTOR-EMITTER VOLTAGE

 

V

CE

(V)  

V

BE(sat)

-I  

C

V

CE(sat)

-I  

C

30  

10  

3

1

COMMON

EMITTER  

/I =10  

Ta=25 C  

COMMON

EMITTER  

I

C

/I

B

=10  

I

C B  

o

5

3

0.5  

0.3  

1

0.1  

o

T

a

=100 C  

0.5  

0.3  

0.05  

0.03  

T

a

=2

5

o

C  

o

T

3

a

=-25 C  

0.1  

0.01  

0.1  

0.3  

1

3

10  

1

0

300  

(mA)  

300  

0.1  

0.3  

1

10  

30  

(mA)  

100  

300  

COLLECTOR CURRENT  

I

C

COLLECTOR CURRENT

I

C  

f

T

-I  

E

I

B

-V

BE  

3K  

1K  

3K  

1K  

COMMON

EMITTER  

CE

=6V  

COMMON

EMITTER  

V

V

CE

=10V  

o

Ta=25 C  

300  

500  

300  

100  

30  

10  

100  

50  

30  

3

1

0.3  

0

10  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

-0.1

-0.3

-1  

-3  

-10  

-30

-100

-300  

EMITTER CURRENT  

I

E

(mA)  

BASE-EMITTER VOLTAGE V

BE

(V)  

REV.08  

2 of 3  

KTC3875S  

h

PARAMETER-V

CE  

h PARAMETER-I  

C

5K  

1K  

5K  

3K  

COMMON

EMITTER  

COMMON EMITTER  

GR  

BL  

I

C

=2mA,f=270Hz  

V

CE

=12V,f=270Hz  

o

o

Ta=25 C  

BL  

1K  

Ta=25 C  

GR  

h

fe  

300  

100  

300  

Y

h

fe  

Y

O

O

BL  

h

ie

x

k  

GR  

100  

30  

10  

3

GR  

BL  

30  

10  

GR  

BL  

Y

Y

h

oe

x  

O

O

h

oe

x  

GR  

BL  

Y

O

3

BL  

GR  

BL  

1

0.3  

0.1  

Y

O

Y

1

Y

O

GR  

-4  

O

h

re  

1

x

10  

-4  

h

re

x

10  

0.3  

0.1  

0.1  

0.3  

3

10  

(mA)  

50  

0.5  

1

3

10  

30  

100  

300  

COLLECTOR CURRENT

I

C  

COLLECTOR-EMITTER VOLTAGE V

CE

(V)  

P

C

-T

a  

200  

150  

100  

50  

0

0

25

50  

75

100  

125 150 175  

o

AMBIENT TEMPERATURE Ta (

 

C)  

REV.08  

3 of 3