Shikues-MJD340

MJD340  

COMPLEMENTAR

Y

SILICON PO

W

ER TRANSISTORS  

2

APPLICATIONS  

1

SOLE

N

OID

/

RELA

Y

DRIVERS  

GE

N

ERAL PURPOSE SWITCHI

N

G A

N

D  

AMPLIFIER  

3

TO-252  

1.Base 2.

 

Collector 3.Emitter  

TO-252  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Symbol  

Value  

Unit  

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

Collector Current  

V

CBO  

V

CEO  

V

EBO  

I

C  

300  

V

V

300  

5

0.5  

V

A

Collector Dissipation  

Junction Temperature  

Storage Temperature Range  

P

C  

625  

mW  

O

C

T

j  

150  

O

C

T

Stg  

– 55 to + 150  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

I

CBO  

Min.  

–

Typ.  

–

Max.  

0.5  

Unit  

Collector Base Cutoff Current  

μ

A  

μ

A  

V

at V

CB

= 35 V  

Emitter Base Cutoff Current  

at V

EB

= 6 V  

I

EBO  

–

300  

300  

5

–

–

–

–

–

–

0.5  

–

Collector Base Breakdown Voltage  

at I

C

= 100 µA  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

V

CE(sat)  

V

BE(sat)  

h

FE  

Collector Emitter Breakdown Voltage  

at I

C

= 2 mA  

–

V

Emitter Base Breakdown Voltage  

at I

E

= 100 µA  

–

V

Collector Emitter Saturation Voltage  

at I

C

= 800 mA, I

B

= 80 mA  

–

0.5  

1.0  

300  

–

V

Base Emitter Saturation Voltage  

at I

C

= 800 mA, I

B

= 80 mA  

–

V

DC Current Gain  

60  

50  

at V

CE

= 10 V, I

C

= 10 mA  

Gain Bandwidth Product  

at V

CE

= 10 V, I

C

= 50 mA  

f

T  

–

MHz  

REV.08  

1 of 3  

MJD340  

REV.08  

2 of 3  

MJD340  

TO-252 PACKAGE OUTLINE  

REV.08  

3 of 3