Shikues-MMBF170

N-Channel Enhancement Mode MOSFET  

Features  

SOT-23  



Surface-mounted package  



Advanced trench cell design  



Extremely low threshold voltage  



ESD protected ( HBM > 2KV )  

Quick reference  



BV

≧

60 V  



P

tot

≦

0.83 W  



I

D

≦

0.5 A  

Top View  



R

DS(ON)

≦

3 Ω @ V

GS

= 10 V  



R

DS(ON)

≦

4 Ω @ V

GS

= 4.5 V  

1 :Gate(G)

 

2 :Source(S)

 

3 :Drain(D)  

Limiting Values  

Notes

：

* Surface Mounted on 1 in

2

pad area, t

≤ 10 sec  

** Pulse width ≤ 300

μ

s, duty cycle ≤ 2 %  

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Electrical Characteristics

( T

A

= 25 °C Unless Otherwise Noted )  

Notes

：

a : Pulse test ; pulse width ≤ 300

μ

s, duty cycle ≤ 2 %  

b : Guaranteed by design, not subject to production testing  

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Typical Characteristics  

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Package Dimensions  

SOT-23  

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