Shikues-MMBT2222AT

MMBT2222T / MMBT2222AT  

NPN Silicon Epitaxial Planar Transistor  

for switching and amplifier applications  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Symbol  

V

CBO  

Value  

Unit  

V

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

MMBT2222T  

60  

75  

30  

40  

5

MMBT2222AT  

MMBT2222T  

MMBT2222AT  

MMBT2222T  

MMBT2222AT  

V

CEO  

V

EBO  

V

V

6

Collector Current  

I

C  

P

tot  

T

j  

600  

150  

mA  

Power Dissipation  

mW  

O

C

Junction Temperature  

Storage Temperature Range  

150  

O

C

T

stg  

– 55 to + 150  

REV.08  

1 of 3  

MMBT2222T / MMBT2222AT  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Max.  

Unit  

DC Current Gain  

at V

CE

= 10 V, I

C

= 0.1 mA  

at V

CE

= 10 V, I

C

= 1 mA  

at V

CE

= 10 V, I

C

= 10 mA  

at V

CE

= 1 V, I

C

= 150 mA  

at V

CE

= 10 V, I

C

= 150 mA  

at V

CE

= 10 V, I

C

= 500 mA  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

35  

50  

75  

50  

100  

30  

–

–

–

–

–

–

–

–

–

–

–

300  

–

–

MMBT2222T  

MMBT2222AT  

40  

Collector Base Cutoff Current  

at V

CB

= 50 V  

at V

CB

= 60 V  

MMBT2222T  

MMBT2222AT  

I

CBO  

–

–

100  

100  

nA  

nA  

V

Emitter Base Cutoff Current  

at V

EB

= 3 V  

I

EBO  

–

100  

Collector Base Breakdown Voltage  

at I

C

= 10 µA  

MMBT2222T  

MMBT2222AT  

V

(BR)CBO  

60  

75  

–

–

Collector Emitter Breakdown Voltage  

at I

C

= 10 mA  

MMBT2222T  

MMBT2222AT  

V

(BR)CEO  

30  

40  

–

–

V

V

Emitter Base Breakdown Voltage  

at I

E

= 10 µA  

MMBT2222T  

MMBT2222AT  

V

(BR)EBO  

5

6

–

–

Collector Emitter Saturation Voltage  

at I

C

= 150 mA, I

B

= 15 mA  

MMBT2222T  

MMBT2222AT  

MMBT2222T  

MMBT2222AT  

–

–

–

–

0.4  

0.3  

1.6  

1

V

CE(sat)  

V

V

at I

C

= 500 mA, I

B

= 50 mA  

Base Emitter Saturation Voltage  

at I

C

= 150 mA, I

B

= 15 mA  

MMBT2222T  

MMBT2222AT  

MMBT2222T  

MMBT2222AT  

–

0.6  

–

1.3  

1.2  

2.6  

2

V

BE(sat)  

at I

C

= 500 mA, I

B

= 50 mA  

–

Transition Frequency  

at V

CE

= 20 V, -I

E

= 20 mA, f = 100 MHz  

f

T  

C

ob  

t

d  

300  

–

MHz  

pF  

ns  

Collector Output Capacitance  

at V

CB

= 10 V, f = 100 KHz  

–

–

–

–

–

8

Delay Time  

10  

25  

225  

60  

at V

CC

= 30 V, V

BE(OFF)

= 0.5 V, I

C

= 150 mA, I

B1

= 15 mA  

Rise Time  

t

r  

ns  

at V

CC

= 30 V, V

BE(OFF)

= 0.5 V, I

C

= 150 mA, I

B1

= 15 mA  

Storage Time  

at V

CC

= 30 V, I

C

= 150 mA, I

B1

= -I

B2

= 15 mA  

t

stg  

t

f  

ns  

Fall Time  

ns  

at V

CC

= 30 V, I

C

= 150 mA, I

B1

= -I

B2

= 15 mA  

REV.08  

2 of 3  

MMBT2222T / MMBT2222AT  

REV.08  

3 of 3