Shikues-MMBT3904M

MMBT3904

M

 

SOT723  

MMBT3904M  

◇

Capable of 200 mWatts of Power Dissipation and 200mA Ic  

◇

Operating and Storage Junction Temperatures: -55

℃

to 150

℃  

◇

Small Outline Surface Mount Package  

◇

RoHS compliant / Green EMC  

Circuit Diagram  

Device Marking Code  

MMBT3904

M

 

1N  

MAXIMUM RATINGS (Ta=25

℃

unless otherwise noted)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

60  

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

40  

V

6

V

Collector Current  

200  

mA  

mW  

℃

/W  

℃

℃

P

C  

Collector Power Dissipation  

Thermal Resistance From Junction To Ambient  

Junction Temperature  

100  

R

Θ

JA  

T

j  

1250  

150  

T

stg  

Storage Temperature  

-55

～

+150  

ELECTRICAL CHARACTERISTICS

@ 25°C Unless Otherwise Specified  

Symbol  

Parameter  

Test Conditions  

I

C

=1.0mA, I

B

=0  

Min  

40  

Max  

Units  

V

Collector-Emitter  

Breakdown Voltage  

V

CEO  

Collector-Base Breakdown  

Voltage  

V

V

I

C

=10µA, I

E

=0  

I

E

=10µA, I

C

=0  

60  

6

V

CBO  

V

EBO  

Emitter-Base Breakdown  

Voltage  

REV.08  

1

of

3  

MMBT3904

M

 

nA  

V

CB

=30V, I

E

=0  

I

CBO  

Collector Cutoff Current  

100  

nA  

50  

V

CE

=30V, V

EB(OFF)

=3.0V  

V

EB

=5V, I

C

=0  

I

CEX  

I

EBO  

Collector Cutoff Current  

Collector Cutoff Current  

DC Current Gain  

nA  

100  

I

C

=0.1mA, V

CE

=1V  

I

C

=1mA, V

CE

=1V  

40  

70  

h

FE(1)  

FE(2)  

FE(3)  

FE(4)  

h

h

h

DC Current Gain  

I

C

=10mA, V

CE

=1V  

I

C

=50mA, V

CE

=1V  

100  

60  

DC Current Gain  

300  

DC Current Gain  

Collector-Emitter  

Saturation Voltage  

Collector-Emitter  

Saturation Voltage  

Base-Emitter Saturation  

Voltage  

0.2  

0.3  

V

V

I

C

=10mA,I

B

=1mA  

I

C

=50mA,I

B

=5mA  

I

C

=10mA,I

B

=1mA  

I

C

=50mA,I

B

=5.0mA  

V

CE(sat)1  

V

CE(sat)2  

V

BE(sat)1  

V

BE(sat)2  

f

T  

0.65  

0.85  

0.95  

V

Base-Emitter Saturation  

Voltage  

V

Current Gain-Bandwidth  

Product  

I

C

=10mA,  

300  

Min  

MHz  

V

CE

=20V,f=100MHz  

SWITCHING CHARACTERISTICS  

Symbol  

td  

Parameter  

Delay Time  

Rise Time  

Test Conditions  

V

CC

=3.0V,V

BE(off)

=-0.5V  

I

C

=10mA,I

B1

=1.0mA  

V

CC

=3.0V,I

C

=10mA  

I

B1

=I

B2

=1.0mA  

Max  

Units  

ns  

35  

tr  

35  

ns  

ts  

Storage Time  

Fall Time  

200  

50  

ns  

tf  

ns  

REV.08  

2

of

3  

MMBT3904

M

 

PACKAGE DIMENSIONS  

Package outline : SOT723  

Top view  

Side view  

Front view  

Soldering Pattern  

Notice:  

1.Lead plating: Pb free solder  

2.Lead thickness includes solder plating  

3.Lead frame: CAC-5  

4.Other Tolerance: ±0.05  

5.Dimensions are exclusive of Burrs,Mold Flash and Tie Bar extrusions  

6.Unit: mm  

REV.08  

3

of

3