Shikues-MMBT3904W

MMBT3904W  

NPN Silicon Epitaxial Planar Transistor  

for switching and amplifier applications  

Marking Code:  

MA  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

Unit  

V

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

60  

40  

V

6

200  

V

Collector Current  

mA  

mW  

Total Power Dissipation  

Junction Temperature  

Storage Temperature Range  

P

tot  

200  

O

C

T

j  

150  

O

C

T

stg  

– 55 to + 150  

REV.08  

1 of

5

 

MMBT3904W  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Max.  

Unit  

DC Current Gain  

at V

CE

= 1 V, I

C

= 0.1 mA  

at V

CE

= 1 V, I

C

= 1 mA  

at V

CE

= 1 V, I

C

= 10 mA  

at V

CE

= 1 V, I

C

= 50 mA  

at V

CE

= 1 V, I

C

= 100 mA  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

40  

70  

100  

60  

–

–

–

–

–

–

–

300  

–

–

30  

Collector Emitter Cutoff Current  

at V

CE

= 30 V  

I

CES  

–

–

50  

50  

–

nA  

nA  

V

Emitter Base Cutoff Current  

at V

EB

= 3 V  

I

EBO  

Collector Base Breakdown Voltage  

at I

C

= 10 µA  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

60  

40  

6

Collector Emitter Breakdown Voltage  

at I

C

= 1 mA  

–

V

Emitter Base Breakdown Voltage  

at I

E

= 10 µA  

–

V

Collector Emitter Saturation Voltage  

at I

C

= 10 mA, I

B

= 1 mA  

at I

C

= 50 mA, I

B

= 5 mA  

–

–

0.2  

0.3  

V

CE(sat)  

V

V

Base Emitter Saturation Voltage  

at I

C

= 10 mA, I

B

= 1 mA  

at I

C

= 50 mA, I

B

= 5 mA  

0.65  

–

0.85  

0.95  

V

BE(sat)  

Transition Frequency  

at V

CE

= 20 V, -I

E

= 10 mA, f = 100 MHz  

f

T  

C

ob  

t

d  

300  

–

4

MHz  

pF  

ns  

Collector Output Capacitance  

at V

CB

= 10 V, f = 100 KHz  

–

–

–

–

–

Delay Time  

35  

35  

200  

50  

at V

CC

= 3 V, V

BE(OFF)

= 0.5 V, I

C

= 10 mA, I

B1

= 1 mA  

Rise Time  

t

r  

ns  

at V

CC

= 3 V, V

BE(OFF)

= 0.5 V, I

C

= 10 mA, I

B1

= 1 mA  

Storage Time  

at V

CC

= 3 V, I

C

= 10 mA, I

B1

= -I

B2

= 1 mA  

t

stg  

t

f  

ns  

Fall Time  

ns  

at V

CC

= 3 V, I

C

= 10 mA, I

B1

= -I

B2

= 1 mA  

REV.08  

2

of

5  

MMBT3904W  

REV.08  

3

of

5  

MMBT3904W  

300  

250  

200  

150  

100  

50  

0

0

25  

100  

Ambient Temperature: Ta ( C)  

Fig.10 Power

 

Dissipation vs Ambient Temperature  

125  

50  

75  

150  

O

REV.08  

4

of

5  

MMBT3904W  

SO

T

 

-323 Package Outline Dimensions  

Dimensions In Millimeters  

Symbol  

Dimensions In Inches  

Min.  

0.900  

0.000  

0.900  

0.200  

0.080  

2.000  

1.150  

2.150  

Max.  

1.100  

0.100  

1.000  

0.400  

0.150  

2.200  

1.350  

2.450  

Min.  

0.035  

0.000  

0.035  

0.008  

0.003  

0.079  

0.045  

0.085  

Max.  

0.043  

0.004  

0.039  

0.016  

0.006  

0.087  

0.053  

0.096  

A

A1  

A2  

b

c

D

E

E1  

e

0.650 TYP.  

0.525 REF.  

0.026 T

Y

P

.  

0.021 REF.  

e1  

L

1.200  

1.400  

0.047  

0.055  

L1  

θ

0.260  

0°  

0.460  

8°  

0.010  

0°  

0.018  

8°  

REV.08  

5

of

5