Shikues-MMBT5551W
| Part # | Shikues-MMBT5551W |
| Download | Shikues-MMBT5551W |
MMBT5551W
MMBT5551W
TRANSISTOR (NPN)
FEATURES
Small Surface Mount Package
Ideal for Medium Power Amplification and Switching
MARKING:K4N
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
V
SOT
–
323
Collector-Base Voltage
180
Collector-Emitter Voltage
Emitter-Base Voltage
160
V
6
V
Collector Current
600
mA
mW
℃
/W
℃
Collector Power Dissipation
Thermal Resistance From Junction
T
o Ambient
Junction
T
e
m
perature
200
P
C
1. BASE
625
R
ΘJA
T
j
2. EMITTER
3. COLLECTOR
150
Storage
T
e
m
perature
T
stg
-55
~
+150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
V
(BR)CBO
I
C
=100µA, I
E
=0
180
V
Collector-base breakdown voltage
V
(BR)CEO
V
(BR)EBO
I
CBO
*
I
C
=1mA, I
B
=0
160
6
V
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
E
=10µA, I
C
=0
V
CB
=120
V
,
I
E
=0
50
50
nA
nA
I
EBO
V
EB
=4
V
,
I
C
=0
Emitter cut-off current
V
CE
=5
V
,
I
C
=1mA
V
CE
=5
V
,
I
C
=10mA
V
CE
=5
V
,
I
C
=50mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
V
CE
=10
V
,
I
C
=10mA , f=100MHz
V
CB
=10
V
,
I
E
=0, f=1MHz
80
80
30
h
FE
DC current gain
300
0.2
0.15
1
V
V
V
CE(sat)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
V
BE(sat)
1
V
f
T
100
300
6
MHz
pF
Transition frequency
C
ob
Collector output capacitance
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
REV.08
1 of 2
MMBT5551W
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.200
0.080
2.000
1.150
2.150
Max.
1.100
0.100
1.000
0.400
0.150
2.200
1.350
2.450
Min.
0.035
0.000
0.035
0.008
0.003
0.079
0.045
0.085
Max.
0.043
0.004
0.039
0.016
0.006
0.087
0.053
0.096
A
A1
A2
b
c
D
E
E1
e
e1
L
0.650 TYP.
0.525 REF.
0.026 T
Y
P
.
0.021 REF.
1.200
1.400
0.047
0.055
L1
θ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
REV.08
2
of 2
