Shikues-MMBTA94

MMBTA

9

4  

SOT-23 Plastic-Encapsulate Transistors  

MMBTA94

TRANSISTOR (PNP)  

SOT

–

23  

FEATURES  



High Breakdown Voltage  

MARKING:4D  

1. BASE  

2. EMITTER  

COLLECTOR  

3.  

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

Unit  

Collector-Base Voltage  

-400  

V

Collector-Emitter Voltage  

Emitter-Base Voltage  

-400  

-5  

V

V

Collector Current -Continuous  

Collector Current -Pulsed  

Collector Power Dissipation  

-200  

-300  

350  

mA  

mA  

mW  

I

CM  

P

C  

Thermal Resistance From Junction To Ambient  

Junction Temperature  

357  

150  

R

ΘJA  

T

j  

℃

/W  

℃

Storage Temperature  

T

stg  

-55

～

+150  

℃

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)  

Parameter  

Symbol  

Test conditions  

Min  

Typ  

Max  

Unit  

V

(BR)CBO  

I

C

=-100µA, I

E

=0  

-400  

-400  

-5  

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

I

C

=-1mA, I

B

=0  

V

I

E

=-100µA, I

C

=0  

V

V

CB

=-400V, I

E

=0  

V

CE

=-400V, I

B

=0  

V

EB

=-4V, I

C

=0  

-0.1  

-5  

µA  

µA  

µA  

I

CEO  

Collector cut-off current  

I

EBO  

-0.1  

300  

Emitter cut-off current  

h

FE(1)  

V

CE

=-10V, I

C

=-10mA  

V

CE

=-10V, I

C

=-1mA  

V

CE

=-10V, I

C

=-100mA  

V

CE

=-10V, I

C

=-50mA  

I

C

=-10mA, I

B

=-1mA  

I

C

=-50mA, I

B

=-5mA  

I

C

=-10mA, I

B

=-1mA  

V

CE

=-20V,I

C

=-10mA,  

f=30MHz  

80  

70  

40  

40  

h

FE(2)  

DC current gain  

h

FE(3)  

h

FE(4)  

V

CE(sat)1  

V

CE(sat)2  

V

BE(sat)  

-0.2  

-0.3  

V

V

V

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

Transition frequency  

-0.75  

f

T  

50  

MHz  

REV.08  

1 of 3  

MMBTA

9

4  

Typical Characteristics  

h

FE

—— I

C  

Static Characteristic  

-20  

-1000  

-100  

-10  

V

CE

= -10V  

COMMON  

EMITTER  

T

a

=25

℃

 

-100uA  

-90uA  

T

a

=100

o  

C

-15  

-10  

-5  

-80uA  

-70uA  

-60uA  

T

a

=25

o  

C

-50uA  

-40uA  

-30uA  

-20uA  

I

B

=-10uA  

-0  

-0  

-2  

-4  

-6  

-8  

-10  

-12  

-14  

-16  

-18  

-20  

-200  

-60  

-1  

-10  

-100  

-200  

-200  

-20  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR-EMITTER VOLTAGE

 

V

CE

(V)  

V

CEsat

—— I

C  

V

BEsat

—— I

C  

-1000  

-800  

-600  

-400  

-200  

-0  

-10  

-1  

β=10  

β=10  

T

a

=25  

℃

T

a

=100  

℃

-0.1  

T

a

=25  

℃

T

a

=100  

℃

-0.01  

-1E-3  

-0.1  

-1  

-10  

-100  

-1  

-10  

-100  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR CURRENT

 

I

C

(mA)  

C

ob

/ C

ib

——  

f

T

——  

V

CB

/

V

EB  

I

C  

60  

1000  

100  

10  

V

CE

=-20V  

T

a

=25

o  

f=1MHz  

I

E

=0 / I

C

=0  

T

a

=25

o  

55  

50  

45  

40  

35  

30  

25  

20  

C

C

C

ib  

C

ob  

1

-0  

-10  

-20  

-30  

-40  

-50  

-0.1  

-1  

-10  

REVERSE VOLTAGE  

V

(V)  

COLLECTOR CURRENT

 

I

C

(mA)  

P

c

—— T

a  

400  

350  

300  

250  

200  

150  

100  

50  

0

0

25  

50  

75  

100  

125  

150  

AMBIENT TEMPERATURE

 

T

a  

(

℃

)  

REV.08  

2

of 3  

MMBTA

9

4  

PACKAGE OUTLINE  

Plastic surface mounted package; 3 leads  

SOT-23  

REV.08  

3

of 3