Shikues-SDV3078

SDV3078  

These N-Channel enhancement mode power field effect  

transistors are using trench DMOS technology. This  

advanced technology has been especially tailored to  

minimize on-state resistance, provide superior switching  

performance, and withstand high energy pulse in the  

avalanche and commutation mode. These devices are  

well suited for high efficiency fast switching applications.  

BVDSS  

30V  

RDSON  

ID  

7.8A  

20m



 

DFN2x2-6L 2EP Pin Configuration  

D

S

S

D

Features  

D

D

D

S



S

30V,7.8A, RDS(ON) =20m

Ω

@VGS = 10V  

D



Improved dv/dt capability  

G



Fast switching  

G

D

D

D

D

G



100% EAS Guaranteed  



Green Device Available  



Marking : VA  

Applications  



MB / VGA / Vcore  



POL Applications  

SMPS 2

nd

SR  



Absolute Maximum Ratings

Tc=25

℃

unless otherwise noted  

Symbol  

Parameter  

Rating  

30  

Units  

V

V

DS  

V

GS  

Drain-Source Voltage  

±

20  

7.8  

V

Gate-Sou

r

ce Voltage  

Drain Current

–

Continuous (T

A

=25

℃

)  

Drain Current

–

Continuous (T

A

=70

℃

)  

Drain Current

–

Pulsed

1  

A

I

D  

6.2  

A

I

DM  

P

D  

31.2  

2.01  

0.016  

A

Power Dissipation (T

A

=25

℃

)  

W

Power Dissipation

–

Derate above 25

℃  

Storage

T

e

mperature Range  

W/

℃  

℃

T

STG  

T

J  

-55 to 150  

-55 to 150  

Operating Junction Temperature Range  

℃

Thermal Characteristics  

Symbol  

Parameter  

Thermal Resistance Junction to ambient  

Typ.  

—  

Max.  

Unit  

R

θ

JA  

62  

℃

/ W  

REV.08  

1 of 5  

SDV3078  

Electrical Characteristics

(T

J

=25

℃

, unless otherwise noted)  

Off Characteristics  

Symbol  

Parameter  

Conditions  

V

GS

=0V , I

D

=250uA  

Min.  

30  

—  

Typ.  

—  

Max.  

—  

Unit  

V

BV

DSS  

Drain-Source Breakdown Voltage  

J

BV

DSS

Temperature Coefficient  

△

BV

DSS

/

△

T  

Reference to 25

℃

, I

D

=1mA  

V

DS

=30V , V

GS

=0V , T

J

=25

℃  

V

DS

=24V , V

GS

=0V , T

J

=125

℃  

0.04  

—  

—  

V/

℃  

uA  

—  

1

I

DSS  

I

GSS  

Drain-Source Leakage Current  

Gate-Source Leakage Current  

—  

—  

10  

uA  

V

GS

=

±

20V , V

DS

=0V  

—  

—  

±

100  

nA  

On Characteristics  

V

GS

=10V , I

D

=4A  

V

GS

=4.5V , I

D

=3A  

—  

—  

15  

21  

1.8  

-4  

20  

30  

2.5  

—  

m



 

m

  

V

R

DS(ON)  

Static Drain-Source On-Resistance

3  

V

GS(th)  

△

V

GS(th)  

gfs  

Gate Threshold Voltage  

1.2  

—  

V

GS

=V

DS

, I

D

=250uA  

V

DS

=10V , I

D

=3A  

V

GS(th)

Temperature Coefficient  

Forward Transconductance  

mV/

℃  

S

—  

6

—  

Dynamic and switching Characteristics  

Q

g  

Q

gs  

Q

gd  

T

d(on)  

T

r  

Total Gate Charge

2 , 3  

Gate-Source Charge

2 , 3  

Gate-Drain Charge

2 , 3  

Turn-On Delay Time

2 , 3  

Rise Time

2 , 3  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

5.2  

0.6  

2

10  

1.2  

4

V

DS

=15V , V

GS

=10V , I

D

=4A  

nC  

ns  

2.8  

7.2  

15.8  

4.6  

370  

70  

5

V

DD

=15V , V

GS

=10V , R

G

=6

  

14  

30  

9

Turn-Off Delay Time

2 , 3  

Fall Time

2 , 3  

I

D

=1A  

T

d(off)  

T

f  

C

iss  

C

oss  

C

rss  

Rg  

Input Capacitance  

740  

140  

100  

4.5  

V

DS

=25V , V

GS

=0V , F=1MHz  

V

GS

=0V, V

DS

=0V, f=1MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

Gate resistance  

50  

2.2  



Drain-Source Diode Characteristics and Maximum Ratings  

Symbol  

I

S  

Parameter  

Continuous Source Current  

Pulsed Source Current

3  

Diode Forward Voltage

3  

Conditions  

Min.  

—  

Typ.  

—  

Max.  

7.8  

Unit  

A

V

G

=V

D

=0V , Force Current  

I

SM  

—  

—  

15.6  

1

A

V

SD  

V

GS

=0V , I

S

=1A , T

J

=25

℃  

—  

—  

V

Note :  

1. Repetitive

 

Rating : Pulsed width limited by maximum junction temperature.  

2. The

 

data tested by pulsed , pulse width

 

≦

300us , duty cycle

 

≦

2%.  

3. Essentially

 

independent of operating temperature.  

REV.08  

2 of 5  

SDV3078  

T

J

, Junction Temperature (

℃

)  

T

J

, Junction Temperature (

℃

)  

Fig.1 Continuous

 

Drain Current vs. T

J  

Fig.2 Normalized

 

RDSON vs. T

J  

Qg , Gate Charge (nC)  

T

J

, Junction Temperature (

℃

)  

Fig.3 Normalized

 

V

th

vs. T

J  

Fig.4 Gate

 

Charge Waveform  

V

DS

, Drain to Source

V

o

ltage (V)  

Square Wave Pulse Duration (s)  

Fig.5 Normalized

 

Transient Response  

Fig.6 Maximum

 

Safe Operation Area  

REV.08  

3 of 5  

SDV3078  

1

2

BV

DSS  

BV

DSS

-V

DD  

V

DS  

EAS=  

BV

DSS  

L x I

AS

2

x  

90%  

V

DD  

I

AS  

10%  

V

GS  

T

d(on)  

T

r  

T

on  

T

d(off)  

T

f  

T

off  

V

GS  

Fig.7 Switching

 

Time Waveform  

Fig.8 EAS

 

Waveform  

REV.08  

4 of 5  

SDV3078  

DFN2X2-6L 2EP PACKAGE INFORMATION  

Dimensions In Millimeters  

Symbol  

Min  

0.50  

0.00  

Typ  

0.55  

Max  

0.60  

0.05  

A

A1  

A2  

b

0.02  

0.152REF  

0.30  

0.25  

1.95  

0.80  

0.25  

1.95  

0.80  

0.46  

0.35  

2.05  

1.00  

0.35  

2.05  

1.00  

0.66  

D

2.00  

D1  

D2  

E

0.90  

0.30  

2.00  

E1  

E2  

e

0.90  

0.56  

0.65BSC  

0.30  

L

0.25  

0.35  

J

0.40BSC  

0.20MIN  

6.00  

K

N

aaa  

bbb  

0.08  

0.10  

REV.08  

5 of 5