Shikues-SK03P06
| Part # | Shikues-SK03P06 |
Download  | Shikues-SK03P06 |
SK03P06
Power Mosfet Wafer ( P-Type 60V )
Features
R
R
DS(ON)
≦
92 m
Ω
@ V
GS
= – 10 V
DS(ON)
≦
125 m
Ω
@ V
GS
= – 4.5 V
-60V / 3A
Advanced trench cell design
High speed switch
SOT-89 / SOT-23 For Surface Mount Package
Applications
Portable appliances
Battery management
SOT-23 PLASTIC PACKAGE
Graphic Symbol
D
SOT-89
G
2.
DRAIN
3.
SOURCE
1.
GATE
S
z
Limiting Values
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Rating
Unit
V
DSS
V
GSS
– 60
V
±
20
REV.08
1
of
4
SK03P06
z
Electrical Characteristics ( Ta = 25 °C Unless Otherwise Noted )
Symbol
Parameter
Conditions
Min Typ Max Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V,
I
DS
= – 250
μ
A
– 60
– 1.3
– 1.8
– 2.5
V
V
–
–
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
DS
= – 250
μ
A
V
DS
= – 48 V, V
GS
= 0 V
–
–
–
–
–
–
– 1
μ
A
I
DSS
I
GSS
Drain Leakage Current
Gate Leakage Current
– 30
μ
A
T
J
= 85
℃
V
GS
= ±20 V, V
DS
= 0 V
± 100
nA
V
GS
= – 10 V, I
DS
= – 0.5 A
–
–
73
92
a
R
DS(ON)
On-State Resistance
mΩ
V
GS
= – 4.5 V, I
DS
= – 0.5 A
95 125
Diode Characteristics
V
SD
Diode Forward Voltage
I
SD
= – 0.5 A, V
GS
= 0V
–
– 0.7
-1.3
V
REV.08
2
of
4
SK03P06
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT-23
REV.08
3
of
4
SK03P06
SOT-
89
Package Outline Dimensions
1.14
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.600
0.520
0.580
0.440
4.600
Min
Max
A
b
b1
c
1.400
0.320
0.400
0.350
4.400
0.055
0.013
0.016
0.014
0.173
0.063
0.020
0.023
0.017
0.181
D
D1
E
E1
e
e1
L
1.550 REF.
0.061 REF.
2.300
3.940
2.600
4.250
0.091
0.155
0.102
0.167
1.500 T
Y
P
.
3.000 T
Y
P
.
0.060 T
Y
P
.
0.118 T
Y
P
.
0.900
1.200
0.035
0.047
Suggested Pad Layout
SOT-
89
REV.08
4
of
4
