Shikues-SK07N65B-TF
| Part # | Shikues-SK07N65B-TF |
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SK07N65B-TF
650V N-ch Planar MOSFET
General Features
BV
DSS
650V
R
DS(ON),Typ.
I
D
1.2
Ω
7.0A
RoHS Compliant
R
DS(ON),typ.
=1.2
Ω@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
Applications
Adaptor
Charger
SMPS Standby Power
G
D
S
Ordering Information
TO-220F
Part Number
Package
SK07N65B-TF
TO-220F
Absolute Maximum Ratings
T
C
=25
℃
unless otherwise specified
SK07N65B-TF
Symbol
V
DSS
V
GSS
I
D
Parameter
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current
650
±30
7.0
V
A
I
DM
Pulsed Drain Current at V
GS
=10V
Single Pulse Avalanche Energy
Power Dissipation
28
550
42
E
AS
mJ
W
P
D
Derating Factor above 25
℃
0.34
W/
℃
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
T
L
T
PAK
300
260
℃
T
J
& T
STG
Operating and Storage Temperature Range
-55 to 150
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
Parameter
SK07N65B-TF
Unit
R
θJC
Thermal Resistance, Junction-to-Case
2.98
℃
/W
R
θJA
Thermal Resistance, Junction-to-Ambient
100
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Electrical Characteristics
OFF Characteristics
T
J
=25
℃
unless otherwise specified
Symbol
Parameter
Min. Typ. Max. Unit
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
650
—
—
V
V
GS
=0V, I
D
=250uA
—
—
—
—
—
—
—
—
1
V
DS
=650V, V
GS
=0V
I
DSS
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
uA
V
DS
=520V, V
GS
=0V,
T
J
=125
℃
100
+100
-100
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
I
GSS
nA
ON Characteristics
Symbol
T
J
=25
℃
unless otherwise specified
Parameter
Min. Typ. Max. Unit
Test Conditions
Static Drain-to-Source
On-Resistance
R
DS(ON)
—
1.2
1.40
Ω
V
GS
=10V, I
D
=3.0A
V
GS(TH)
gfs
Gate Threshold Voltage
2.0
—
—
4.0
—
V
S
V
DS
=V
GS
, I
D
=250uA
VDS=30V,ID=3.5A
Forward Transconductance
11
Dynamic Characteristics
Essentially independent of operating temperature
Min. Typ. Max. Unit
Symbol
Parameter
Test Conditions
C
iss
Input Capacitance
—
—
—
—
—
—
1120
10
—
—
—
—
—
—
V
GS
=0V,
V
DS
=25V,
f=1.0MH
Z
C
rss
C
oss
Q
g
Reverse Transfer Capacitance
Output Capacitance
pF
nC
90
Total Gate Charge
20
5
V
DD
=325V,
I
D
=7A, V
GS
=0 to 10V
Q
gs
Q
gd
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
5
Resistive Switching Characteristics
Essentially independent of operating temperature
Min. Typ. Max. Unit
Symbol
Parameter
Test Conditions
td
(ON)
Turn-on Delay Time
—
—
—
—
12
12
18
10
—
—
—
—
V
DD
=325V,
I
D
=7A,
V
GS
=10V
Rg=4.7
Ω
t
rise
Rise Time
ns
td
(OFF)
t
fall
Turn-Off Delay Time
Fall Time
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Source-Drain Body Diode Characteristics
T
J
=25
℃
unless otherwise specified
Symbol
I
SD
Parameter
Continuous Source Current
[2]
Pulsed Source Current
[2]
Min
—
Typ. Max. Unit
Test Conditions
—
—
7.0
28
Integral pn-diode
in MOSFET
A
I
SM
—
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
1.5
—
V
I
S
=7A, V
GS
=0V
350
1.1
ns
uC
V
GS
=0V
I
F
=7
A, di/dt=100A/μs
Q
rr
—
Note:
[1] T
J
=+25 to
+150
[2] Pulse width≤380µs; duty cycle≤2%.
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Test Circuits and Waveforms
Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit
Fig. 1.2 Peak Diode Recovery dv/dt Waveforms
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Test Circuits and Waveforms
(Cont.)
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