Shikues-SK120N03B
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SK120N03B
30V N-Channel MOSFET
General Features
BV
DSS
30V
R
DS(ON),typ.
I
D
3.7m
Ω
120A
Proprietary New Trench
T
e
chnology
R
DS(ON),typ.
=3.7m
Ω@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
Applications
High efficiency DC/DC Converters
Motor Bridge Switch
Oring FET/Load Switching
G
D
S
Ordering Information
TO-252
Part Number
Package
Package No to Scale
TO-252
SK120N03B
Absolute Maximum Ratings
T
C
=25
℃
unless otherwise specified
Symbol
V
DSS
V
GSS
I
D
Parameter
Unit
SK120N03B
Drain-to-Source Voltage
[1]
Gate-to-Source Voltage
30
±20
120
480
200
5.0
V
A
Continuous Drain Current
T
C
=25
℃
Pulsed Drain Current at V
GS
=10V
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
[3]
Power Dissipation
T
C
=25
℃
Power Dissipation
T
A
=25
℃
Derating Factor above
25
℃
I
DM
E
AS
dv/dt
mJ
V/ns
120
0.8
W
P
D
0.031
W/
℃
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
T
L
T
PAK
300
260
℃
T
J
& T
STG
Operating and Storage Temperature Range
-55 to 150
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
Parameter
Unit
SK120N03B
R
θJC
Thermal Resistance, Junction-to-Case
1.25
℃
/W
R
θJA
Thermal Resistance, Junction-to-Ambient
75
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SK120N03B
Electrical Characteristics
OFF Characteristics
T
J
=25
℃
unless otherwise specified
Symbol
BV
DSS
I
DSS
Parameter
Min. Typ. Max. Unit
Test Conditions
V
GS
=0V, I
D
=250uA
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
30
—
—
V
—
—
—
—
—
—
1
uA
V
DS
=30V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
+100
-100
I
GSS
Gate-to-Source Leakage Current
nA
ON Characteristics
Symbol
T
J
=25
℃
unless otherwise specified
Parameter
Min. Typ. Max. Unit
Test Conditions
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
—
—
3.7
3.9
4
6
Static Drain-to-Source
On-Resistance
R
DS(ON)
m
Ω
V
GS(TH)
Gate Threshold Voltage
1.0
1.7
3.0
V
V
DS
=V
GS
, I
D
=250uA
Dynamic Characteristics
Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Unit
Test Conditions
C
iss
Input Capacitance
—
—
—
—
—
—
—
3385
338
469
81
—
—
—
—
—
—
—
V
GS
=0V,
V
DS
=25V,
f=1.0MH
Z
C
rss
C
oss
Reverse Transfer Capacitance
Output Capacitance
pF
nC
V
GS
=0 to 10V
V
GS
=0 to 4.5V
Q
g
Total Gate Charge
43
V
DD
=20V,
I
D
=30A,
Q
gs
Q
gd
Gate-to-Source Charge
12
Gate-to-Drain (Miller) Charge
20
Resistive Switching Characteristics
Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Unit
Test Conditions
t
d(ON)
Turn-on Delay Time
—
—
—
—
16
12
89
37
—
—
—
—
V
DD
=20V,
I
D
=30A,
V
GS
= 10V
R
G
=3.0
Ω
t
rise
Rise Time
ns
t
d(OFF)
t
fall
Turn-Off Delay Time
Fall Time
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SK120N03B
T
J
=25
℃
unless otherwise specified
Source-Drain Body Diode Characteristics
Symbol
I
SD
Parameter
Continuous Source Current
Pulsed Source Current
Min
—
Typ. Max. Unit
Test Conditions
—
—
120
480
Integral PN-diode in
MOSFET
A
I
SM
—
V
SD
trr
Diode Forward Voltage
Reverse recovery time
Reverse recovery charge
—
—
—
—
30
5
1.2
—
V
I
S
=30A, V
GS
=0V
ns
nC
V
GS
=0V ,I
F
=30A,
di
F
/dt=100A/μs
Qrr
—
Note:
[1] T
J
=+25
℃
to +150
℃
.
[2] Silicon limited current only.
[3] Package limited current.
[4] Repetitive rating; pulse width limited by maximum junction temperature.
[5] Puls
e width≤380µs; duty cycle≤2%.
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SK120N03B
Typical Characteristics
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SK120N03B
Typical Characteristics
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SK120N03B
Test Circuits and
Waveforms
Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit
Fig. 1.2 Peak Diode Recovery dv/dt Waveforms
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SK120N03B
Test Circuits and
Waveforms
(Cont.)
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