Shikues-SK2301AAW

Part #	Shikues-SK2301AAW
Download	Shikues-SK2301AAW

SK2301AAW

SOT-323 Plastic-Encapsulate

MOSFETS

P-Channel 20-V(D-S) MOSFET

FEATURE

TrenchFET Power MOSFET

•

APPLICATIONS

Load Switch for Portable Devices

DC/DC Converter

•

•

SOT-323

MARKING: A1S

3. DRAIN

2. SOURCE

1. GATE

Maximum ratings (T

a

=25

℃

unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Value

Unit

V

DS

V

GS

I

D

-20

±8

V

Gate-Source Voltage

-2.1

Continuous Drain Current

Pulsed Drain Current

A

I

DM

I

S

-4.8

Continuous Source-Drain Diode Current

Maximum Power Dissipation

-0.72

0.

35

P

D

R

W

Thermal Resistance from Junction to Ambient(t

≤

5s)

Junction Temperature

357

JA

θ

℃

/W

T

J

150

℃

Storage Temperature

T

stg

-55 ~

+

150

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SK2301AAW

Electrical characteristics (T

a

=25

℃

unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Static

Drain-

s

ource

b

reakdown

v

oltage

Gate-

s

ource

t

hreshold

v

oltage

Gate-

s

ource

l

eakage

Zero

g

ate

v

oltage

d

rain

c

urrent

V

(BR)

DS

S

V

GS(th)

I

GSS

V

GS

= 0V, I

D

=-250µA

V

DS

=V

GS

, I

D

=-250µA

V

DS

=0V, V

GS

=

±

8V

V

DS

=-20V, V

GS

=0V

V

GS

=-4.5V, I

D

=-1A

V

GS

=-2.5V, I

D

=-0.5A

V

DS

=-5V, I

D

=-1.8A

-20

V

-0.4

-1

±

100

-1

nA

µA

I

DSS

0.090

0.110

6

.

5

0.120

0.170

Drain-

s

ource

o

n-

s

tate

r

esistance

a

R

DS(on)

g

fs

Ω

a

Forward

t

ransconductance

S

Dynamic

b

Input

c

apacitance

Output

c

apacitance

Reverse

t

ransfer

c

apacitance

C

iss

C

oss

C

rss

405

75

V

DS

=-10V,V

GS

=0V,f =1MHz

V

DS

=-10V,V

GS

=-4.5V,I

D

=-3A

V

DS

=-10V,V

GS

=-2.5V,I

D

=-3A

f =1MHz

pF

55

5.5

3.3

0.7

1.3

6.0

11

10

6

Total

g

ate

c

harge

Q

g

nC

Ω

Gate-

s

ource

c

harge

Gate-

d

rain

c

harge

Gate

r

esistance

Turn-

o

n

d

elay

t

ime

Rise

t

ime

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

20

60

50

20

V

DD

=-10V,

35

R

L

=10

ꢀ

,

I

D

=-1A,

ns

Turn-

o

ff

d

elay

t

ime

Fall

t

ime

30

V

GEN

=-4.5V,Rg=1

ꢀ

10

Drain-source

b

ody diode characteristics

Continuous

s

ource-

d

rain

d

iode

current

I

S

-1.3

T

C

=25

℃

A

V

a

-10

Pulse

d

iode

f

orward

c

urrent

I

SM

-1.2

Body

d

iode

v

oltage

V

SD

I

S

=-0.7A

-0.8

Notes :

a.Pulse

T

e

st : Pulse Width < 300µs, Duty Cycle

≤

2%.

b.Guaranteed by design, not subject to production testing.

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SK2301AAW

Typical Characteristics

Output Characteristics

Transfer Characteristics

-14

-12

-10

-8

-10

-8

V

GS

= -4.0V,-3.5V,-3.0V,-2.5V

T

a

=25

℃

T

a

=25

℃

Pulsed

Pulsed

V

GS

=-2.0V

-6

-6

-4

V

GS

=-1.5V

-4

-2

-2

V

GS

=-1.0V

-0

-0

-0

-1

-2

-3

-4

-0.0

-0.5

-1.0

-1.5

-2.0

-2.5

DRAIN TO SOURCE VOLTAGE

V

DS

(V)

GATE TO SOURCE VOLTAGE

V

GS

(V)

R

DS(ON)

—— I

D

R

DS(ON)

—— V

GS

150

120

90

60

30

0

250

200

150

100

50

T

a

=25

℃

T

a

=25

℃

Pulsed

Pulsed

V

GS

=-2.5V

V

GS

=-4.5V

I

D

=-3.6A

0

-0

-2

-4

-6

-8

-10

-0

-2

-4

-6

-8

DRAIN CURRENT

I

D

(A)

GATE TO SOURCE VOLTAGE

V

GS

(V)

I

S

—— V

SD

-1

T

a

=25

℃

Pulsed

-0.3

-0.1

-0.03

-0.01

-3E-3

-1E-3

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

SOURCE TO DRAIN VOLTAGE

V

SD

(V)

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SK2301AAW

SO

T

-323 Package Outline Dimensions

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min.

0.900

0.000

0.900

0.200

0.080

2.000

1.150

2.150

Max.

1.100

0.100

1.000

0.400

0.150

2.200

1.350

2.450

Min.

0.035

0.000

0.035

0.008

0.003

0.079

0.045

0.085

Max.

0.043

0.004

0.039

0.016

0.006

0.087

0.053

0.096

A

A1

A2

b

c

D

E

E1

e

e1

L

0.650 TYP.

0.525 REF.

0.026 T

Y

P

.

0.021 REF.

1.200

1.400

0.047

0.055

L1

θ

0.260

0°

0.460

8°

0.010

0°

0.018

8°

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