Shikues-SK2306

Part #	Shikues-SK2306
Download	Shikues-SK2306

SK2306

N-Channel

Enhancement Mode Power MOSFET

Description

The

230

6

uses advanced trench technology to provide

SK

excellent R

DS(ON)

and low gate charge .This device is suitable

for use as a load switch or in PWM applications.

D

General Features

●

V

DS

= 30

V

,

I

D

= 3.6A

G

R

DS(ON)

< 73m

Ω

@ V

GS

=4.5V R

DS(ON)

<58m

Ω

@ V

GS

=10V

S

SOT-23 top view

Marking and pin assignment

●

High power and current handing capability

●

Lead free product is acquired

●

Surface mount package

Schematic diagram

Application

●

Battery protection

●

Load switch

●

Power management

Absolute Maximum Ratings (T

A

=25

℃

unless otherwise noted)

Parameter

Symbol

Limit

30

Unit

V

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V

DS

±20

V

V

GS

3.6

A

I

D

Drain Current-Pulsed (Note 1)

15

A

I

DM

Maximum Power Dissipation

1.7

W

℃

P

D

Operating Junction and Storage Temperature Range

-55

T

o

1

50

T

J

,T

STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note 2)

R

θ

JA

73.5

℃

/W

Electrical Characteristics (T

A

=25

℃

unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV

DSS

I

DSS

V

GS

=0V I

D

=250

μ

A

30

–

33

–

–

V

V

DS

=30V,V

GS

=0V

1

μ

A

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SK2306

Gate-Body Leakage Current

On Characteristics (Note 3)

Gate Threshold Voltage

I

GSS

V

GS

=±20V,V

DS

=0V

–

–

±100

nA

V

GS(th)

R

DS(ON)

g

FS

V

DS

=V

GS

,I

D

=250

μ

A

V

GS

=4.5V, I

D

=3.1A

V

GS

=10V, I

D

=3.6A

V

DS

=5V,I

D

=3.6A

1.2

1.5

58

40

11

2.2

73

58

–

V

–

–

–

m

Ω

m

Ω

S

Drain-Source On-State Resistance

Forward Transconductance

Dynamic Characteristics (Note4)

Input Capacitance

C

lss

C

oss

C

rss

–

–

–

230

40

–

–

–

PF

PF

PF

V

DS

=15V,V

GS

=0V,

F=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 4)

Turn-on Delay Time

17

t

d(on)

t

r

t

d(off)

t

f

–

–

–

–

–

–

–

10

50

–

–

–

–

–

–

–

nS

nS

nS

nS

nC

nC

nC

Turn-on Rise Time

V

DD

=10V,I

D

=3.6A

V

GS

=4.5V,R

GEN

=6

Ω

Turn-Off Delay Time

10

Turn-Off Fall Time

20

Total Gate Charge

Q

g

Q

gs

Q

gd

4.0

0.75

0.65

V

DS

=15V,I

D

=3.6A,

V

GS

=10V

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

Diode Forward Current (Note 2)

V

SD

I

S

V

GS

=0V,I

S

=2.7A

–

–

0.8

–

1.2

1.6

V

A

Notes:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t

≤

10 sec.

3.

Pulse Test: Pulse Width

≤

300

μ

s, Duty Cycle

≤

2%.

4.

Guaranteed by design, not subject to production

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SK2306

Typical Electrical and Thermal Characteristics

Vdd

t

on

t

r

t

off

t

f

t

d(on)

V

OUT

V

IN

t

d(off)

Rl

Vin

90%

90%

D

Vout

Vgs

INVERTED

Rgen

10%

90%

G

10%

50%

S

50%

10%

PULSE WIDTH

Figure 1:Switching Test Circuit

Figure 2:Switching Waveforms

T

J

-Junction

T

e

mperature(

℃

)

T

J

-Junction

T

e

mperature(

℃

)

Figure 3 Power Dissipation

Figure 4 Drain Current

Vds Drain-Source Voltage (V)

I

D

– Drain Current (A)

Figure 5 Output Characteristics

Figure 6 Drain-Source On-Resistance

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SK2306

Vgs Gate-Source Voltage (V)

T

J

-Junction

T

e

mperature(

℃

)

Figure 7 Transfer Characteristics

Figure 8 Drain-Source On-Resistance

Vgs Gate-Source Voltage (V)

Vds Drain-Source Voltage (V)

Figure 9 Rdson vs Vgs

Figure 10 Capacitance vs Vds

Qg Gate Charge (nC)

Vsd Source-Drain Voltage (V)

Figure 11 Gate Charge

Figure 12 Source- Drain Diode Forward

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SK2306

Vds Drain-Source Voltage (V)

Figure 13

Safe Operation Area

Square Wave

Pluse Duration(sec)

Figure 14 Normalized Maximum Transient Thermal Impedance

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