Shikues-SK2371AA
| Part # | Shikues-SK2371AA |
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SK2371AA
Product Summary
P-Ch 100V Fast Switching MOSFETs
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
Advanced high cell density Trench
technology
•
•
•
•
BVDSS
RDSON
ID
-100V
0.65Ω
-2A
•
•
Marking
•
K
71
Description
The
SK2371AA
s the high cell density trenched P-
ch MOSFETs, which provides excellent RDSON
and efficiency for most of the small power
switching and load switch applications.
SOT23 Pin Configuration
The 100P02 meets the RoHS and Green Product
requirement with full function reliability approved.
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
-100
Units
V
Drain-Source Voltage
V
GS
Gate-Sou
r
ce Voltage
±
20
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
-2
A
-1.5
A
-3
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
1
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
125
80
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θJC
—
REV.08
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SK2371AA
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-100
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DS
△
T
J
S
/
BVDSS Temperature Coefficient
△
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-1.5A
-0.0624
0.52
0.56
-1.5
4.5
—
—
V/
℃
—
0.65
0.7
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-4.5V , I
D
=-1A
—
V
GS(th)
V
GS(th)
Gate Threshold Voltage
-1.0
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-80V , V
GS
=0V , T
J
=25
℃
V
DS
=-80V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
—
10
I
DSS
Drain-Source Leakage Current
uA
—
—
100
±
100
—
I
GSS
gfs
R
g
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
—
nA
S
V
DS
=-5V , I
D
=-0.8A
—
3
V
DS
=0V , V
GS
=0V , f=1MHz
—
16
32
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
4.5
1.14
1.5
13.6
6.8
34
—
V
DS
=-15V , V
GS
=-4.5V , I
D
=-0.5A
nC
ns
Q
gs
Q
gd
—
—
—
—
T
d(on)
T
r
—
—
V
DD
=-50V , V
GS
=-10V , R
G
=3.3
—
—
I
D
=-0.5A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
—
3
—
C
iss
C
oss
C
rss
Input Capacitance
—
553
29
—
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V , V
GS
=0V , f=1MHz
—
—
pF
—
20
—
Diode Characteristics
Symbol
Parameter
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
Conditions
Min.
—
Typ.
—
Max.
-0.9
-1.8
-1.2
Unit
A
I
S
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.
The power dissipation is limited by 150
℃
junction temperature
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
4.
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SK2371AA
Typical Characteristics
550
540
530
520
510
500
1.2
I
D
=0.5A
V
GS
=-10V
0.9
0.6
0.3
0.0
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-3V
2
4
6
8
10
0
0.25
0.5
0.75
1
-V
GS
(V)
-V
DS
,Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
1.5
10
7.5
5
V
DS
=-20V
I
D
=-0.5A
1
T
J
=150
℃
T
J
=25
℃
0.5
2.5
0
0
0.00
0.25
0.50
0.75
1.00
0
2.5
5
7.5
10
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
2.0
1.5
1.0
0.5
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
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3
SK2371AA
1000
100
10
10.00
1.00
0.10
0.01
0.00
F=1.0MHz
Ciss
1ms
100ms
1s
10S
DC
Coss
T
A
=25
℃
Crss
Single Pulse
1
5
9
13
17
21
25
10
0.1
1
100
1000
-V
DS
,Drain to Source Voltage (V)
-V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
UTY=0.5
0.2
0.1
0.01
.1
.05
0.02
0.01
P
DM
T
ON
0.001
0.0001
INGLE PULSE
T
D = T
ON
/T
T
Jpeak
= T
C
+ P
DM
x R
θJC
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fi .9
Normalized Maximum Transient Thermal Impedance
g
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
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