Shikues-SK336P

SK336P  

P-Channel Enhancement Mode MOSFET  

Feature  

DS(ON)  

R

GS  

-20V/-2A,  

= 120mΩ(MAX)

 

@V =

 

-4.5

V

.  

DS(ON)  

R

GS  

= 150mΩ(MAX)

 

@V =

 

-2.5

V

.  

DS(ON)  

Super High dense cell design for extremely low R  

Reliable and Rugged  

SOT-23 for

 

Surface Mount Package  

SOT-23  

Applications  

●

Power Management  

Portable Equipment and Battery Powered Systems.  

A

T =2

5

℃

Unless Otherwise noted  

Absolute Maximum Ratings  

Parameter  

Symbol  

V

DS  

Limit  

-20  

±10  

-2  

Units  

Drain-Source

V

o

ltage  

V

V

A

Gate-Source

V

o

ltage  

V

GS  

Drain Current-Continuous  

I

D  

A

T =2

5

℃

Unless Otherwise noted  

Electrical Characteristics  

Parameter  

Off Characteristics  

Symbol

T

e

st

 

Conditions  

Min  

Typ.  

Max  

Units  

Drain to Source Breakdown

V

o

ltage  

BVDSS  

IDSS  

VGS=0

V

,

I

D=-250μA  

VDS=-20

V

,

V

GS=0V  

-20  

–

–

–

–

V

Zero-Gate

V

o

ltage Drain Current  

-1  

μA  

Gate Body Leakage Current, Forward  

Gate Body Leakage Current, Reverse  

IGSSF  

IGSSR  

VGS=10

V

,

V

DS=0V  

VGS=-10

V

,

V

DS=0V  

–

–

–

–

100  

-100  

nA  

nA  

On Characteristics  

Gate Threshold

V

o

ltage  

VGS(th)  

VGS= VDS, ID=-250µA  

-0.4  

–

-1.0  

V

Static Drain-source  

On-Resistance  

RDS(ON)  

VGS =-4.5

V

,

I

D =-2.0A  

VGS =-2.5

V

,

I

D =-1.5A  

–

–

—  

—  

120  

150  

mΩ  

mΩ  

Drain-Source Diode Characteristics and Maximum Ratings  

Drain-Source Diode Forward

V

o

ltage  

VSD  

VGS =0

V

,

I

S=-1.25A  

-1.2  

V

REV.08  

1 of 4  

SK336P  

Typical Characteristics  

12  

10  

VGS=3

，

3.5

，

4V

，

4.5V  

14  

12  

10  

8

VGS=2.5V  

8

6

4

2

0

Tj

＝

15

0

℃  

6

4

2

0

Tj

＝

2

5

℃  

VGS=2.0V  

0

1

2

3

4

5

0

1

2

3

4

-V

DS,

Dra

in-

So

urc  

e

V

olt

age

(V

)  

–

VGS,Gate-to-Source Voltag  

e

(V)  

Figure 1

 

Output Characteristics  

Figure 2

 

Transfer Characteristics  

．

．

1.3  

1.2  

1.1  

1

23.  

2

I

D=250uA  

23  

22.  

8

6

22.  

22.  

22.  

4

2

0.9  

0.8  

22  

0

50  

100  

150  

0

50  

100  

150  

Tj,Junction

Temperatur

e(

℃

)  

Tj,J

unct

ion

Tempe

rature(  

℃

)  

Figure 3

 

Breakdown

V

o

ltage

V

a

riation  

Figure 4

 

Gate Threshold

V

a

riation  

．

．

with

T

e

mperature  

with

T

e

mperature  

REV.08  

2 of 4  

SK336P  

Typical Characteristics  

0

0

0

0

.

35  

0

.125  

0.12  

.115  

0.11  

.105  

-2.0V/-2.0A  

0

.

3  

.

25  

VGS=-2.5V  

VGS=-4.5V  

0

0

.

2  

.

15  

0

.

1

05  

0

0

.

0

.

1  

0

50  

100  

150  

0

5

10  

15  

20  

T

j

,

J

un

c  

t

i

o

n

Tempera  

t

u

r

e(  

℃

)  

–

I

D

–  

D

r

a

i

n  

C

u

rr

en

t

(

A

)  

Figure 5

 

On-Resistance Variation  

Figure 6

 

On-Resistance vs. Drain Current  

．

．

with

T

e

mperature  

0.3  

100  

ID=-2A  

0.25  

0.2  

10  

Tj

＝

15

0

℃  

ID=-1.5A  

0.15  

Tj

＝

2

5

℃  

1

0.1  

0.05  

0

0.  

1

1

2

3

4

5

1

2

3

4

5

–

VG

S,Gate-to-Source

Voltage

(V)  

–

VS

D,

Bo

dy

Di

ode Forw

ar  

d

V

ol

ta

ge

(V

)  

Figure 7

 

On-Resistance vs. Gate-to-Source  

Figure 8  

Source-Drain Diode Forward  

．

．

V

o

ltage  

V

o

ltage  

REV.08  

3 of 4  

SK336P  

Package Outline Dimensions

 

(UNIT: mm)  

SO

T

-23  

REV.08  

4 of 4