Shikues-SK3401DM

SK3401DM  

P-Type

30-V

Power MOSFET  

◇

Features  

SOT23-6  

Top View  

1

2

3

6

5

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

Advanced trench cell design  

Extremely low threshold voltage  

VD

≦ – 30 V  

3 mm  

R

DS(ON)

≦ 54 mΩ

 

@ VGS = – 10 V  

R

DS(ON)

≦ 72 mΩ

 

@ VGS = – 4.5 V  

R

DS(ON)

≦ 120 mΩ @ VGS = – 2.5V  

4

2.85 mm  

◇Applications  







Portable appliances  

Battery management  

High speed switch  

z

Limiting Values  

Symbol  

Parameter  

Drain-Source Voltage  

Gate-Source Voltage  

Rating  

– 30  

Unit  

V

DSS  

V

GSS  

V

±

12  

z

Electrical Characteristics ( Ta = 25 ºC Unless Otherwise Noted )  

Symbol  

Static Characteristics  

Parameter  

Conditions  

Min Typ Max Unit  

BV

DSS  

V

GS(th)  

Drain-Source Breakdown Voltage  

Gate Threshold Voltage  

V

GS

= 0 V,

 

I

DS

= – 250 μA  

V

DS

= V

GS

, I

DS

= – 250 μA  

V

DS

= – 24 V, V

GS

= 0 V  

– 30  

– 0.7

 

– 1

 

– 1.3  

V

V

–

–

–

–

–

–

–

–

– 1.0

 

μA  

– 30

 

μA  

I

DSS  

I

GSS  

Drain Leakage Current  

Gate Leakage Current  

–

T

J

= 85

℃  

V

GS

= ± 12 V, V

DS

= 0 V  

V

GS

= – 10 V, I

DS

= – 0.5 A  

V

GS

= – 4.5 V, I

DS

= – 0.5 A  

V

GS

= – 2.5 V, I

DS

= – 0.5 A  

–

± 100

 

nA  

54  

44  

62  

98  

a,c  

R

DS(ON)  

On-State Resistance  

72  

mΩ  

120  

Diode Characteristics  

V

SD

Diode Forward Voltage  

I

SD

= – 1 A, V

GS

= 0 V  

–

– 0.7

 

– 0.95  

V

REV.08  

1 of

2

 

SK3401DM  

Package Dimensions  

REV.08  

2

of

2