Shikues-SK3415K

SK3415K  

P-Channel Enhancement Mode MOSFET  

Feature  

DS(ON)  

GS  



-20V/-4.0A,  

R

= 60mΩ(MAX)

 

@V =

 

-4.5

V

.  

DS(ON)  

R

GS  

=70mΩ(MAX) @V

 

= -2.5

V

.  

DS(ON)  



Super High dense cell design for extremely low R  

Reliable and Rugged  





ESD Protected  

SC-59  



SC-59 for Surface Mount Package  

Applications  

●

Power Management  

●

Portable Equipment and Battery Powered Systems.  

A

T =2

5

℃

Unless Otherwise noted  

Absolute Maximum Ratings  

Parameter  

Symbol  

V

DS  

Limit  

-20  

Units  

Drain-Source

V

o

ltage  

V

V

A

Gate-Source

V

o

ltage  

V

GS  

±10  

Drain Current-Continuous  

I

D  

-4.0  

A

T =2

5

℃

Unless Otherwise noted  

Electrical Characteristics  

Parameter  

Symbol Test

 

Conditions  

Min  

Typ.  

Max  

Units  

Off Characteristics  

Drain to Source Breakdown

V

o

ltage  

Zero-Gate

V

o

ltage Drain Current  

Gate Body Leakage Current, Forward  

Gate Body Leakage Current, Reverse  

BVDSS  

IDSS  

VGS=0

V

,

I

D=-250μA  

VDS=-20

V

,

V

GS=0V  

VGS=10

V

,

V

DS=0V  

VGS=-10

V

,

V

DS=0V  

-20  

–

–

–

–

–

V

–

–

–

-1  

μA  

μA  

μA  

IGSSF  

IGSSR  

10  

-10  

On Characteristics  

Gate Threshold

V

o

ltage  

VGS(th)  

VGS= VDS, ID=-250µA  

VGS =-4.5

V

,

I

D =-4.0A  

VGS =-2.5

V

,

I

D =-4.0A  

-0.4  

–

-1.0  

60  

V

Static Drain-source

 

On-Resistance  

RDS(ON)  

–

–

35  

45  

mΩ  

mΩ  

70  

Drain-Source Diode Characteristics and Maximum Ratings  

Drain-Source Diode Forward

V

o

ltage  

VSD  

VGS =0

V

,

I

S=-1.0A  

-1.2  

V

REV.08  

1

SK3415K  

Typical Characteristics  

REV.08  

2 of 4  

SK3415K  

REV.08  

3 of 4  

SK3415K  

Package Outline Dimensions

 

(UNIT: mm)  

SC-59  

SC-59 Carrier

T

a

pe  

REV.08  

4 of 4