Shikues-SK35P06
| Part # | Shikues-SK35P06 |
Download  | Shikues-SK35P06 |
SK35P06
Description
The
SK35P06
uses advanced trench technology and design
to
provide excellent R
DS(ON)
with low gate charge .This device is well suited
for high current load applications.
General Features
TO-252 top view
●
V
DS
=-60
V
,
I
D
=-
35
A
R
DS(ON)
<
30
m
Ω
@ V
GS
=-10V
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Good stability and uniformity with high E
AS
●
Excellent package for good heat dissipation
Schematic diagram
Absolute Maximum Ratings (T
C
=25
°
C
u
nless otherwise noted)
Parameter
Symbol
V
DSS
V
GSS
I
D
Value
-60V
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
±20V
-35
A
Drain Current-Continuous @ T
C
=25
℃
Drain Current-Pulsed
I
DM
-140
A
Operating Junction
T
e
mperature Range
T
J
-50 to 150
°
C
°C
Electrical Characteristics(T
A
=25°C unless otherwise noted)
Symbol
Min.
Parameter
OFF CHARACTERISTIC
Conditions
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTIC
B
VDSS
I
DSS
V
GS
=0V , ID=-250uA
-60
–
–
–
–
V
V
DS
=-48
V
,
V
GS
=0
V
,
T
J
=25
°
C
V
GS
=±20V , V
DS
=0V
–
–
-1
uA
nA
±
100
I
GSS
Gate Threshold Voltage
V
GS(TH)
R
DS(ON)
V
GS
=V
DS
, I
D
=-250uA
V
GS
=-10V , I
D
=-8A
V
GS
=-4.5V , I
D
=-6A
-1.2
-1.6
24
-2.5
30
V
–
–
Static Drain-Source On-Resistance
DYNAMIC CHARACTERISTICS
mΩ
28
35
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
GS
=0
V
,
I
S
=-1A
NOTE:
V
SD
–
–
-1.0
V
1.
Pulse Test: Pulse Width
≦
300μs, Duty C
ycle
≦
2%.
2.
Drain Current, Power Dissipation and RDS(ON) calculated by TO-252 Package Type.
REV.08
1 of
4
SK35P06
Typical Electrical and Thermal Characteristics (Curves)
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 1 Output Characteristics
Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
I
D
– Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
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SK35P06
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 8 Safe Operation Area
Figure 9 BV
DSS
vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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SK35P06
TO-252 Package Information
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Min.
0.087
0.000
0.026
0.018
0.256
0.201
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
c
D
D1
D2
E
0.483 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
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