Shikues-SK35P10
| Part # | Shikues-SK35P10 |
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SK35P10
MOSFET
Metal-Oxide-Semiconductor Field-Effect Transistor
100V P-Channel MOSFET
General Description
The SK35P10P uses advanced Trench technology and designs to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load switching and general purpose applications.
Product Summary
TO-252
BV
DSS
-100
V
mΩ
R
DS(ON)
@V
GS
=-10V
50(Max.)
55(Max.)
-35
mΩ
A
R
DS(ON)
@V
GS
=-4.5V
I
D
Features
Applications
Graphic Symbol
●
Improved dv/dt capability
●
Low Input Capacitance
●
100% EAS Guaranteed
●
Green Device Available
●
Net Working
●
Load Switch
●
LED Application
●
Quick Charger
Maximum Ratings (T
A
=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
Value
Unit
V
DSS
V
GSS
-100
±
20V
V
V
Gate-Source Voltage
NOTE 1
NOTE 1
T
C
=25
℃
-35
Drain Current-Continuous
I
D
A
T
C
=100
℃
-23
Drain Current-Pulsed
NOTE 2
I
DM
I
AS
-100
A
A
Single Pulse Avalanche Current
28
Single Pulse Avalanche Energy
NOTE 3
Maximum Power Dissipation @ T
C
=25
℃
Storage
T
emperature Range
E
AS
P
D
392
mJ
W
°C
°C
NOTE 4
104
T
STG
T
J
-50 to 150°C
-50 to 150°C
Operating Junction Temperature Range
Parameter
Symbol Conditions
Min.
Typ
Max
Unit
Maximum Junction-to-Ambient
NOTE 1
Maximum Junction-to-Case
NOTE 1
R
θJA
R
θJC
Steady State
Steady State
–
–
–
–
62
°C/W
°C/W
1.2
REV.08
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SK35P10
Electrical Characteristics (T
A
=25°C unless otherwise noted)
Min.
Typ.
Max. Unit
Parameter
Symbol
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV
DSS
I
DSS
V
GS
=0V , I
DS
=-250uA
-100
–
–
–
–
V
V
DS
=-100V, V
GS
=0
V
,
T
J
=25°C
–
–
-1
uA
nA
V
GS
=
±
20V , V
DS
=0V
±
100
Gate-Source Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(ON)
gfs
V
GS
=V
DS
, I
DS
=-250uA
V
GS
=-10V , I
DS
=-10A
V
GS
=-4.5V , I
DS
=-8A
-1.2
-1.8
44
-2.5
50
55
–
V
mΩ
S
–
–
–
Drain-Source On-Resistance
48
Forward Transconductance
V
DS
=-10V , I
D
=-10A
32
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
C
oss
C
rss
–
–
–
6500
225
–
–
–
V
DS
=-20V, V
GS
=0V,
f=1MHz
Output Capacitance
pF
ns
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
130
T
d(on)
t
r
T
d(off)
t
f
–
–
–
–
–
–
–
21
32
–
–
–
–
–
–
–
Rise Time
V
DS
=-50V, I
D
=-14A,
R
GEM
=3.3
Ω
, V
GS
=-10V
Turn-Off Delay Time
125
64.2
90
Fall Time
Total Gate Charge
Q
g
V
DS
=-80V, I
DS
=-14A,
V
GS
=-10V
Gate to Source Gate Charge
Gate to Drain ”Miller” Charge
SWITCHING CHARACTERISTICS
Q
gs
Q
gd
18.2
14.5
nC
V
V
GS
=0V, I
S
=-1A,
T
J
=25°C
Drain-Source Diode Forward Voltage
2
V
SD
–
–
-1.2
Continuous Source Current
NOTE1, 5
I
S
–
–
–
–
-35
-90
A
A
V
G
=V
D
=0V , Force
Current
Pulsed Source Current
NOTE1, 5
I
SM
Notes:
1. The
data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2. The
data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3. The
EAS data shows Max. rating . The test condition is V
DD
=-25V, V
GS
=-10V, L=1mH, I
AS
=-28A
4. The
power dissipation is limited by 150
℃
junction temperature
5. The
data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation
REV.08
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6
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SK35P10
Typical Operating Characteristics
REV.08
3
6
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SK35P10
Typical Operating Characteristics (Cont.)
REV.08
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6
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SK35P10
Soldering Methods for SK Product
1. Storage
environment: Temperature=10
°
C to35
°
C Humidity=65%
±
15%
2. Reflow
soldering of surface-mount devices
REV.08
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SK35P10
PACKAGE DIMENSION
TO-252-2
Symbol
Millimeters
Inches
Min.
2.184
0.890
0.635
0.910
4.953
0.457
0.457
5.334
5.207
6.350
4.320
Max.
2.338
1.143
0.890
1.143
5.460
0.610
0.890
6.223
Min.
0.086
0.035
0.025
0.035
0.195
0.018
0.018
0.210
0.205
0.250
0.170
Max.
0.094
0.045
0.035
0.045
0.215
0.024
0.035
0.245
A
A1
b
b2
b3
c
c1
D
D1
E
6.730
0.265
E1
e
2.29 BSC
0.090 BSC
L
L1
L2
3.700
0.850
0.890
4.400
1.250
1.270
0.146
0.033
0.035
0.173
0.049
0.050
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