Shikues-SKML2502

SKML2502  

N-Channel Enhancement Mode MOSFET  

Feature  

DS(ON)  

DS(ON)  

DS(ON)  

GS  

30V/4.5A, R  

= 35mΩ(MAX)

 

@V =

 

10

V

.  



GS  

R

R

=40mΩ(MAX) @V

 

= 4.5

V

.  

GS  

=55mΩ(MAX) @V  

= 2.5

V

.  

DS(ON) .  





Super High dense cell design for extremely low R  

Reliable and Rugged.  

SOT

–

2

3  

SOT- 23 for Surface Mount Package.  



A

pplications  

●

Power Management  

Portable Equipment and Battery Powered Systems.  

A

T =2

5

℃

Unless Otherwise noted  

Absolute Maximum Ratings  

Parameter  

Drain-Source

V

o

ltage  

Gate-Source

V

o

ltage  

Symbol  

V

DS  

V

GS  

Limit  

30  

±12  

4.5  

Units  

V

V

A

Drain Current-Continuous  

I

D  

A

T =2

5

℃

Unless Otherwise noted  

Electrical Characteristics  

Parameter  

Symbol

T

e

st

 

Conditions  

Min  

Typ.  

Max  

Units  

Off Characteristics  

Drain to Source Breakdown

V

o

ltage  

BVDSS  

IDSS  

VGS=0

V

,

I

D=250μA  

VDS=30

V

,

V

GS=0V  

30  

–

–

–

–

V

Zero-Gate

V

o

ltage Drain Current  

1

μA  

Gate Body Leakage Current, Forward  

Gate Body Leakage Current, Reverse  

IGSSF  

IGSSR  

VGS=12

V

,

V

DS=0V  

VGS=-12

V

,

V

DS=0V  

–

–

–

–

100  

-100  

nA  

nA  

On Characteristics  

Gate Threshold

V

o

ltage  

VGS(th)  

VGS= VDS, ID=250µA  

0.6  

–

1.5  

V

Static Drain-source  

On-Resistance  

RDS(ON)  

VGS =10

V

,

I

D =5.8A  

VGS =4.5

V

,

I

D =5A  

–

–

30  

33  

35  

40  

mΩ  

mΩ  

VGS =2.5

V

,

I

D =4A  

VGS =0

V

,

I

S=1.25A  

–

45  

55  

mΩ  

V

Drain-Source Diode Characteristics and Maximum Ratings  

Drain-Source Diode Forward

V

o

ltage  

VSD  

1.2  

REV.08  

1 of 4  

SKML2502  

Dynamic  

Q

g  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

Turn-on Time  

V

DS

=15

V

,

V

GS

=10

V

,

I

D

=2A  

8.5  

1.1  

1.8  

12  

nC  

n

S  

Q

gs  

Q

gd  

t

on  

V

DD

=15

V

,

I

D

=2A,V

GS

=10

V

,

R

G

=6Ω  

40  

t

d(ON)  

t

r  

T

d(off)  

t

f  

Turn-on Delay time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

Turn-off Time  

11  

17  

37  

20  

t

off  

60  

Typical Characteristics  

Figure 1

 

Output Characteristics  

．

Figure 2

 

Transfer Characteristics  

．

Typical Characteristics  

Figure 3

 

Gate Threshold

V

a

riation  

Figure 4

 

On-Resistance

V

a

riation  

．

．

with

T

emperature  

with

T

emperature  

REV.08  

2 of 4  

SKML2502  

Figure 5  

．

．

Source-Drain Diode Forward  

On-Resistance vs. Gate-to-Source  

Figure 6  

V

o

ltage  

V

o

ltage  

REV.08  

3 of 4  

SKML2502  

Package Outline Dimensions

 

(UNIT: mm)  

SO

T

–

23  

REV.08  

4 of 4