SINO-IC-SE01P13K

SE01P13K  

P-Channel Enhancement Mode Power MOSFET  

Revision: A  

General Description  

Features  

Advanced trench technology to provide  

excellent RDS(ON), low gate charge and low  

operation voltage. This device is suitable for  

using as a load switch or in PWM applications.  

For a single MOSFET  





V

DS

= -100V  

R

DS(ON)

= 110m

Ω

@ V

GS

=-10V  







Simple Drive Requirement  

Small Package Outline  

Surface Mount Device  

Pin configurations  

See Diagram below  

D

D

G

S

D

G

S

Absolute Maximum Ratings  

Parameter  

Symbol  

V

DS  

Rating  

-100  

±

20  

-13  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

V

V

GS  

Continuous  

Drain Current  

I

D  

A

Pulsed  

-30  

40  

Total Power Dissipation  

@TA=25

℃  

P

D  

E

AS  

T

J  

W

mJ  

℃

Single Pulse Avalanche Energy  

110  

Operating Junction

T

e

mperature Range  

-55 to 150  

Thermal Resistance  

Symbol Parameter  

Typ  

Max  

Units  

℃

/W  

R

θ

JC  

Thermal Resistance, Junction to Case  

–

3.13  

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

SE01P13K  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

D

=-250

μ

A, V

GS

=0 V  

V

DS

=-100V, V

GS

=0V  

V

GS

=20V  

-100  

V

μ

A  

μ

A  

V

-1  

10  

I

GSS  

V

GS(th)  

R

DS(ON)  

gfs  

V

DS

= V

GS

, I

D

=250

μ

A  

V

GS

=-10V, I

D

=-16A  

V

DS

=-15V, I

D

=-5A  

-1  

–

-1.9  

170  

-3  

Static Drain-Source On-Resistance  

Forward Transconductance  

200  

m

Ω  

S

12  

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

760  

260  

170  

pF  

pF  

pF  

V

GS

=0V, V

DS

=-25V,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

SWITCHING PARAMETERS  

t

d(on)  

t

d(off)  

t

d(r)  

Turn-On Delay Time  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

V

DS

=-50V, V

GS

=-10V  

14  

50  

18  

18  

ns  

ns  

ns  

ns  

R

t

d(f)  

Source-Drain Ratings and Characteristics  

I

S  

V

SD  

trr  

Continuous Source Current  

130  

-1.2  

mA  

V

Diode Forward Voltage  

Reverse Recovery Time  

I

S

=-10A,VGS=0V  

TJ=25

℃

, IF=-10A  

di/dt=100A/

μ

s  

35  

46  

nS  

Qrr  

Reverse Recovery Charge  

nc  

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

SE01P13K  

Test Circuits and Waveform  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SE01P13K  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.  

SE01P13K  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

5.  

SE01P13K  

Package Outline Dimension  

TO-252  

The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics  

Co., Ltd.  

© 2005 SINO-IC – Printed in China – All rights reserved.  

SHANGHAI SINO-IC MICROELECTRONICS CO., LTD  

Add: Building 3, Room 3401-03, No.200 Zhangheng Road,  

ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China  

Email:

ShangHai Sino-IC Microelectronic Co., Ltd.  

6.