SINO-IC-SE100180GA

SE100180GA  

N-Channel Enhancement-Mode MOSFET  

Revision: A  

General Description  

Features  

For a single MOSFET  

Advanced trench technology to provide  

excellent RDS(ON), low gate charge and low  

operation voltage. This device is suitable for  

using as a load switch or in PWM  

applications.  





V

DS

= 100V  

R











Synchronous Rectification in SMPS  

Hard Switching and High Speed Circuit  

Power

T

o

ols  

UPS  

Motor Control  

Pin configurations  

See Diagram below  

Absolute Maximum Ratings  

Parameter  

Symbol  

V

DS  

Rating  

100  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

V

V

GS  

±

20  

180  

Continuous  

Pulsed  

Single Pulse Avalanche Energy  

Drain Current  

I

D  

A

400  

1000  

E

AS  

P

D  

T

J  

mJ  

W

Total Power Dissipation  

@TC=25

℃  

300  

Operating Junction

T

e

mperature Range  

-55 to 175  

℃

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

SE100180GA  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

D

=250

μ

A, V

GS

=0 V  

V

DS

=100V, V

GS

=0V  

V

GS

=20V  

100  

V

μ

A  

nA  

V

1

I

GSS  

100  

4.0  

2.8  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

= V

GS

, I

D

=250

μ

A  

V

GS

=10V, I

D

=40A  

V

DS

=10V, I

D

=20A  

2.0  

–

2.8  

2.5  

90  

Static Drain-Source On-Resistance  

Forward Transconductance  

m

Ω  

S

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

7300  

580  

18  

pF  

pF  

pF  

V

GS

=0V, V

DS

=50V,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

SWITCHING PARAMETERS  

2

Q

g  

Q

gs  

Q

gd  

t

d(on)  

Total Gate Charge  

118  

27  

nC  

nC  

nC  

ns  

V

GS

=10V, V

DS

=50

V

,  

I

D

=20A  

Gate Source Charge  

Gate Drain Charge  

Turn-On Delay Time  

21  

V

GS

=10V, V

DS

=50

V

,  

35  

R

t

d(off)  

t

d(r)  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

92  

56  

26  

ns  

ns  

ns  

t

d(f)  

Thermal Resistance  

Symbol Parameter  

Typ  

Max  

0.53  

Units  

℃

/W  

R

θ

JC  

Thermal Resistance Junction to Case(t

≤

10s)  

–

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

SE100180GA  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SE100180GA  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.  

SE100180GA  

Package Outline Dimension  

TO-220  

ShangHai Sino-IC Microelectronic Co., Ltd.  

5.  

The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.  

© 2005 SINO-IC – Printed in China – All rights reserved.  

SHANGHAI SINO-IC MICROELECTRONICS CO., LTD  

Add:

Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-

T

e

ch Park, Pudong,  

Shanghai 201203, China  

Phone:

+86-21-33932402 33932403 33932405 33933508 33933608  

Fax:

+86-21-33932401  

Email:

Website:

ShangHai Sino-IC Microelectronic Co., Ltd.  

6.