SINO-IC-SE1216

Mar 2015  

SE1216  

P-Channel Enhancement-Mode MOSFET  

Revision: A  

General Description  

Features  

Advanced trench technology to provide  

excellent RDS(ON), low gate charge and low  

operation voltage. This device is suitable for  

using as a load switch or in PWM applications.  

For a single MOSFET  







V

DS

= -12V  

R

R







Simple Drive Requirement  

Small Package Outline  

Surface Mount Device  

Pin configurations  

See Diagram below  

Absolute Maximum Ratings  

Parameter  

Symbol  

Rating  

-12  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

V

GS  

V

V

±

12  

-21  

Continuous  

Drain Current  

I

D  

A

Pulsed  

-28  

2.4  

Total Power Dissipation  

@TA=25

℃  

P

D  

T

J  

W

Operating Junction

T

e

mperature Range  

-55 to 150  

℃

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

SE1216  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

D

=250

μ

A, V

GS

=0 V  

V

DS

= -12V, V

GS

=0V  

V

GS

=12V  

-12  

V

μ

A  

nA  

V

-1  

100  

-1  

I

GSS  

V

GS(th)  

V

DS

= V

GS

, I

D

=250

μ

A  

V

GS

=-4.5V, I

D

=-6.7A  

-0.4  

–

-0.7  

11  

18  

2

R

DS(ON)  

Static Drain-Source On-Resistance  

m

Ω  

V

GS

=-2.5V, I

D

=-6.2A  

14  

22  

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

–

–

–

2138  

685  

–

–

–

pF  

pF  

pF  

V

GS

=0V, V

DS

=-6V,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

650  

SWITCHING PARAMETERS  

2

Q

g  

Total Gate Charge  

–

–

–

21  

–

–

–

nC  

nC  

V

GS

=-4.5V, V

DS

=-6V,  

I

D

=-10A  

Q

gs  

Gate Source Charge  

2.5  

Q

gd  

t

d(on)  

t

d(off)  

t

d(r)  

Gate Drain Charge  

Turn-On Delay Time  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

6

nC  

ns  

ns  

ns  

ns  

V

GS

=-4.5V, V

DS

=-6V,  

30  

97  

48  

65  

R

t

d(f)  

Thermal Resistance  

Symbol Parameter  

Typ  

Max  

Units  

R

θ

JC  

R

θ

JA  

Junction to Case  

Junction to Ambient (

t≦

10s)  

6.9  

52  

8

℃

/W  

℃

/W  

62.5  

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

SE1216  

Package Outline Dimension  

DFN2 × 2-6L  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SE1216  

The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics  

Co., Ltd.  

© 2005 SINO-IC – Printed in China – All rights reserved.  

SHANGHAI SINO-IC MICROELECTRONICS CO., LTD  

Add: Building 3, Room 3401-03, No.200 Zhangheng Road,  

ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China  

Phone: +86-21-33932402 33932403  

33932405 33933508 33933608  

Fax: +86-21-33932401  

Email:

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.