SINO-IC-SE18NS65F

Apr 2015  

SE18NS65  

N-Channel Enhancement-Mode MOSFET  

Revision: A  

General Description  

Features  

Thigh Density Cell Design For Ultra Low

 

For a single MOSFET  

On-Resistance Fully Characterized Avalanche  

Voltage and Current Improved Shoot-Through  

FOM  





V

DS

= 650V  

R

DS(ON)

= 200

mΩ @ V

GS

=10V  







Simple Drive Requirement  

Small Package Outline  

Surface Mount Device  

Pin configurations  

See Diagram below  

TO-220  

TO-220F  

DFN8x8  

Absolute Maximum Ratings  

Parameter  

Drain-Source Voltage  

Symbol  

V

DS  

Rating  

650  

Units  

V

V

Gate-Source Voltage  

V

GS  

±

30  

18  

Continuous  

Pulsed  

Drain Current  

I

D  

A

50  

320  

Avalanche Energy, Single Pulse  

Avalanche Current, Repetitive  

E

AS  

I

AR  

P

D  

T

J  

mJ  

A

2.2  

T

o

tal Power Dissipation  

@

T

A

=25

℃  

156  

W

℃

Operating Junction

T

e

mperature Range  

-55 to 150  

Thermal Resistance  

Symbol Parameter  

Min  

Typ  

0.6  

62  

Units  

℃

/W  

℃

/W  

R

θ

JC  

R

θ

JA  

Junction to Case  

Junction to Ambient (

t

≦

10s)  

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

SE18NS65  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

D

=250

μ

A, V

GS

=0 V  

V

DS

=650

V

,

V

GS

=0V  

V

GS

=30V  

650  

V

μ

A  

nA  

V

1

I

GSS  

100  

4.5  

260  

V

GS(th)  

R

DS(ON)  

V

DS

= V

GS

, I

D

=250

μ

A  

V

GS

=10

V

,

I

D

=8.5A  

2.5  

Static Drain-Source On-Resistance

2  

200  

m

Ω  

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

800  

180  

8

pF  

pF  

pF  

V

GS

=0

V

,

V

DS

=25

V

,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

SWITCHING PARAMETERS  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

d(off)  

t

d(r)  

T

o

tal Gate Charge

2  

Gate Source Charge  

Gate Drain Charge  

Turn-On Delay Time  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

43  

5

nC  

nC  

nC  

ns  

ns  

ns  

ns  

V

GS

=10

V

,

V

DS

=480

V

,  

I

D

=6.5A  

22  

13  

100  

11  

V

GS

=10

V

,

V

DS

=400

V

,  

R

GEN

=20

Ω  

I

D

=6.5A  

t

d(f)  

12  

Source-Drain Characteristics  

Test Condition  

Symbol Parameter  

Min  

Typ  

0.85  

21  

Max  

Units  

V

SD  

I

rrm  

Diode forward voltage  

Peak Reverse Recovery Current  

V

GS

=0

V

,

I

S

=7.5A  

V

A

V

R

=400

V

, I

F

=7.5A  

di/dt=100A/

μ

s  

T

rr  

Reverse recovery time

7  

405  

4.0  

ns  

Q

rr  

Reverse recovery charge

7  

μ

C  

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

SE18NS65  

Test Circuits and Waveform  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SE18NS65  

Test Circuits and Waveform  

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.  

SE18NS65  

Typical Characteristics  

Power Dissipation  

Max. transient thermal impedance  

Safe operation area TC=25

℃

 

Typ.output characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

5.  

SE18NS65  

ShangHai Sino-IC Microelectronic Co., Ltd.  

6.  

SE18NS65  

ShangHai Sino-IC Microelectronic Co., Ltd.  

7.  

SE18NS65  

ShangHai Sino-IC Microelectronic Co., Ltd.  

8.  

SE18NS65  

Package Outline Dimension  

TO-220  

ShangHai Sino-IC Microelectronic Co., Ltd.  

9.  

SE18NS65  

TO-220F  

ShangHai Sino-IC Microelectronic Co., Ltd.  

10.  

SE18NS65  

Package Outline Dimension  

DFN8x8  

ShangHai Sino-IC Microelectronic Co., Ltd.  

11.