SINO-IC-SE20N50
| Part # | SINO-IC-SE20N50 |
Download  | SINO-IC-SE20N50 |
Apr 2015
SE20N50
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Features
Thigh Density Cell Design For Ultra Low
For a single MOSFET
On-Resistance Fully Characterized Avalanche
Voltage and Current Improved Shoot-Through
FOM
V
DS
= 500V
R
DS(ON)
= 260mΩ @ V
GS
=10V
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Pin configurations
See Diagram below
TO-220
TO-220F
TO-247
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
V
DS
Rating
Units
500
±
30
20
V
V
Gate-Source Voltage
V
GS
Continuous
Drain Current
I
D
A
Pulsed
62
205
Total Power Dissipation
@TA=25
℃
P
D
T
J
W
Operating Junction
T
emperature Range
-55 to 150
℃
ShenZhen Sino-IC Semiconductor Co., Ltd.
1.
SE20N50
Electrical Characteristics
(TJ=25
℃
unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS (Note 2)
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
I
D
=250μA, V
GS
=0 V
V
DS
= 500V, V
GS
=0V
V
GS
=30 V
500
V
μA
nA
V
1
I
GSS
100
4.5
320
V
GS(th)
R
DS(ON)
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=5A
2.5
Static Drain-Source On-Resistance
2
260
mΩ
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
1440
300
10
pF
pF
pF
V
GS
=0V, V
DS
=25V,
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
d(r)
Total Gate Charge
2
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
70
7.8
9
nC
nC
nC
ns
ns
ns
ns
V
GS
=10V, V
DS
=480V,
I
D
=10A
V
GS
=10V, V
DS
=400V,
R
GEN
=20Ω
25
70
55
40
I
D
=5A
t
d(f)
REVRESE DIODE CHARCTERISTICS
I
S
V
SD
t
rr
Maximum Body Diode Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS
=0V
20
1.5
250
A
V
V
GS
=0V, I
F
=20A
V
R
=100V, I
F
=20A,
dIF/dt=100A/us
ns
ShenZhen Sino-IC Semiconductor Co., Ltd.
2.
SE20N50
Test Circuits and Waveform
ShenZhen Sino-IC Semiconductor Co., Ltd.
3.
SE20N50
Test Circuits and Waveform
ShenZhen Sino-IC Semiconductor Co., Ltd.
4.
SE20N50
Typical Characteristics
Safe operation area TC=25
℃
Typ.output characteristics
ShenZhen Sino-IC Semiconductor Co., Ltd.
5.
SE20N50
ShenZhen Sino-IC Semiconductor Co., Ltd.
6.
SE20N50
ShenZhen Sino-IC Semiconductor Co., Ltd.
7.
SE20N50
ShenZhen Sino-IC Semiconductor Co., Ltd.
8.
SE20N50
Package Outline Dimension
TO-220
ShenZhen Sino-IC Semiconductor Co., Ltd.
9.
SE20N50
TO-247
ShenZhen Sino-IC Semiconductor Co., Ltd.
10.
SE20N50
TO-220F
ShenZhen Sino-IC Semiconductor Co., Ltd.
11.
