SINO-IC-SE2305A

SHANGHAI  

July 2005  

MICROELECTRONICS CO., LTD.  

SE2305A  

20V P-Channel Enhancement-Mode MOSFET  

Revision:A  

General Description  

Features  

SE2305A is produced with high cell density  

DMOS trench technology, which is especially  

used to minimize on-state resistance. This  

device particularly suits low voltage  

applications such as portable equipment,  

power management and other battery  

powered circuits, and low in-line power  

dissipation are needed in a very small outline  

surface mount  

●

●

●

●

V

DS

-20V  

=

R

DS(on)

68m

Ω

@V  

-1.8V

，

I =

 

-2A  

=

=

GS  

=

GS  

=

GS  

D

R

DS(on)

52m

Ω

@V  

-2.5V

，

I =

 

-4.1A  

=

D

R

DS(on)

39m

Ω

@V  

-4.5V

，

I =

 

-4.7A  

D

=

Application  

●

●

Load Switch  

A Switch and Battery Switch for Portable  

.

Devices  

Pin configurations(

SOT23

)  

Absolute Maximum Ratings  

Parameter  

Symbol  

Rating  

-20  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

V

GS  

I

D  

V

V

A

±12  

Drain Current (Note 1)  

Continuous  

Pulsed  

-4.7  

-20  

Total Power Dissipation

 

@TA=25°C  

@TA=75°C  

P

D  

T

J  

1.25  

W

0.8  

Operating Junction Temperature Range  

-55 to 150  

°C  

ShangHai Sino-IC Microelectronics Co., Ltd.  

1.  

SE2305A  

Electrical Characteristics

 

(T

J

=25°C unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BVDSS Drain-Source

 

Breakdown Voltage  

I

D

=-250

μ

A, V

GS

=0 V  

V

DS

=-16 V, V

GS

=0 V  

V

DS

=0 V, V

GS

=±8 V  

V

DS

=V

GS

I

D

=-250

μ

A  

V

GS

=-1.8V, I

D

=-2A  

V

GS

=-2.50V, I

D

=-4.1A  

V

GS

=-4.5V, I

D

=-4.7A  

-20  

–

–

–

1

V

μ

A  

μ

A  

V

–

IDSS  

IGSS  

Zero Gate Voltage Drain Current  

Gate-Body leakage current  

–

-0.4  

–

–

±100  

-1  

V

GS

(th) Gate

 

Threshold Voltage  

–

45  

35  

30  

68  

52  

39  

R

DS(ON)

Static Drain-Source On-Resistance

2  

m

Ω  

–

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

–

–

–

1020  

191  

–

–

–

pF  

pF  

pF  

V

GS

=0V, V

DS

=-10V,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

140  

SWITCHING PARAMETERS  

t

d(on)  

Turn-On DelayTime

2  

Turn-Off DelayTime  

–

–

25  

50  

V

GS

=-10V, V

GEN

=-4.5V,  

R

L

=10

Ω

, R

G

=6

Ω  

I

D

=-1A  

ns  

V

t

d(off)  

V

SD  

71  

–

142  

-1.2  

Drain-Source Diode Forward Voltage

 

V

GS

=0

V

,I

S

=-1  

ShangHai Sino-IC Microelectronics Co., Ltd.  

2.  

SE2305A  

Typical Characteristics  

ShangHai Sino-IC Microelectronics Co., Ltd.  

3.  

SE2305A  

ShangHai Sino-IC Microelectronics Co., Ltd.  

4.  

SE2305A  

ShangHai Sino-IC Microelectronics Co., Ltd.  

5.  

SE2305A  

The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.  

© 2005 SINO-IC – Printed in China – All rights reserved.  

ShangHai Sino-IC Microelectronics Co., Ltd.  

6.