SINO-IC-SE2333

SE2333  

P-Channel Enhancement-Mode MOSFET  

Revision: A  

General Description  

Features  

Advanced trench technology to provide  

excellent RDS(ON), low gate charge and low  

operation voltage. This device is suitable for  

using as a load switch or in PWM applications.  

For a single MOSFET  





V

DS

= -20V  

R

DS(ON)

= 20mΩ @ V

GS

=-4.5V  







Simple Drive Requirement  

Small Package Outline  

Surface Mount Device  

Pin configurations  

See Diagram below  

SOT-23-3  

Absolute Maximum Ratings  

Parameter  

Symbol  

Rating  

-20  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

V

GS  

V

V

±

12  

-6  

Continuous  

Drain Current  

I

D  

A

Pulsed  

-20  

1.8  

Total Power Dissipation  

@TA=25

℃  

P

D  

T

J  

W

Operating Junction

T

emperature Range  

-55 to 150  

℃

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

SE2333  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

D

=-250μA, V

GS

=0V  

V

DS

=-20V, V

GS

=0V  

V

GS

=12V  

-20  

V

μA  

nA  

V

-1  

I

GSS  

100  

-1.0  

30  

V

GS(th)  

V

DS

= V

GS

, I

D

=-250μA  

V

GS

=-4.5V, I

D

=-6A  

-0.4  

-0.65  

20  

mΩ  

R

DS(ON)  

g

FS  

Static Drain-Source On-Resistance  

Forward Transconductance  

V

GS

=-2.5V, I

D

=-5A  

V

DS

=-5V, I

D

=-6A  

26  

17  

45  

mΩ  

S

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

1100  

390  

300  

pF  

pF  

pF  

V

GS

=0V,  

f=1MHz  

V

DS

=-6V,  

Output Capacitance  

Reverse Transfer Capacitance  

SWITCHING PARAMETERS  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

d(off)  

t

d(r)  

Total Gate Charge

2  

Gate Source Charge  

Gate Drain Charge  

Turn-On Delay Time  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

11.5  

1.5  

3.2  

25  

nC  

nC  

nC  

ns  

ns  

ns  

ns  

V

GS

=-4.5V,  

I

D

=-6A  

V

DS

=-6V,  

V

GS

=-4.5V, V

DS

=-6V,  

R

GEN

=6Ω, R

L

=6Ω  

72  

45  

t

d(f)  

60  

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

SE2333  

Test Circuits and Waveform  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SE2333  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.  

SE2333  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

5.  

SE2333  

Package Outline Dimension  

SOT-23-3  

ShangHai Sino-IC Microelectronic Co., Ltd.  

6.  

SE2333  

The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.  

© 2005 SINO-IC – Printed in China – All rights reserved.  

SHANGHAI SINO-IC MICROELECTRONICS CO., LTD  

Add:

Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,  

Shanghai 201203, China  

Phone:

+86-21-33932402 33932403 33932405 33933508 33933608  

Fax:

+86-21-33932401  

Email:

Website:

ShangHai Sino-IC Microelectronic Co., Ltd.  

7.