SINO-IC-SE2N60B

Oct 2014  

SE2N60B  

N-Channel Enhancement-Mode MOSFET  

Revision: A  

General Description  

Features  

This series is a high voltage power MOSFET

 

For a single MOSFET  

and is designed to have better characteristics,  

such as fast switching time, low gate charge,  

low on-state resistance and have a high rugged  

avalanche characteristics  





V

DS

= 600V  

R

DS(ON)

= 3.4

Ω

@ V

GS

=10V  

Pin configurations  

See Diagram below  

TO-252  

Absolute Maximum Ratings  

Parameter  

Drain-Source Voltage  

Symbol  

V

DS  

Rating  

600  

Units  

V

V

Gate-Source Voltage  

V

GS  

±

30  

2

Continuous  

Drain Current  

Pulsed  

Avalanche Energy Single Pulsed

3  

Peak Diode Recovery dv/dt

4  

Power Dissipation  

I

D  

A

8

180  

E

AS  

Dv/dt  

P

D  

mJ  

V/ns  

W

4.5  

33  

Operating Junction

T

e

mperature Range  

T

J  

-55 to 150  

℃

Thermal Resistance  

Symbol Parameter  

Typ.  

Max.  

62.5  

Units  

℃

/W  

R

θ

JA  

Junction to Ambient (

t

≦

10s)  

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

SE2N60B  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

V

GS

=0

V

,

I

D

=250

μ

A,  

V

DS

=600

V

,

V

GS

=0V  

V

GS

=30V  

600  

V

μ

A  

nA  

V

1

I

GSS  

100  

4.5  

4.3  

V

GS(th)  

R

DS(ON)  

V

DS

= V

GS

, I

D

=250

μ

A  

2.5  

Static Drain-Source On-Resistance

2

V

GS

=10

V

,

I

D

=1A  

3.4  

Ω

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

520  

60  

8

680  

80  

pF  

pF  

pF  

V

GS

=0

V

,

V

DS

=25

V

,  

Output Capacitance  

f=1MHz  

Reverse Transfer Capacitance  

10.5  

SWITCHING PARAMETERS  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

d(off)  

t

d(r)  

T

o

tal Gate Charge

2  

10.5  

2.5  

4.0  

11  

13.5  

nC  

nC  

nC  

ns  

ns  

ns  

ns  

V

GS

=10

V

,

V

DS

=520

V

,  

Gate Source Charge  

I

D

=2A  

Gate Drain Charge  

Turn-On Delay Time  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

V

DS

=325

V

, R

GEN

=25

Ω  

33  

90  

I

D

=2A  

45  

40  

88  

t

d(f)  

48  

100  

Source-Drain Diode Characteristics  

V

SD  

I

S  

Drain-Source Diode Forward Voltage  

Max Drain-Source Diode Current  

Max Pulse Drain-Source Current  

Reverse Recovery Time  

V

GS

=0

V

,

I

S

=2A  

1.4  

2

V

A

I

SM  

t

rr  

8

A

VGS=0

V

,

IS=2A  

dI

F

/dt=100A/

μ

s

1  

300  

2.2  

ns  

Q

RR  

Reverse Recovery Charge  

μ

C  

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

SE2N60B  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SE2N60B  

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.  

SE2N60B  

Package Outline Dimension  

TO-252  

ShangHai Sino-IC Microelectronic Co., Ltd.  

5.  

The SINO-IC logo is a registered trademark of ShangHai Sino-IC  

Microelectronics Co., Ltd.  

©

2005 SINO-IC – Printed in China – All rights reserved.  

SHANGHAI SINO-IC MICROELECTRONICS CO., LTD  

Add:

Building 3, Room 3401-03, No.200 Zhangheng Road,  

ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China  

Phone:

+86-21-33932402 33932403  

33932405 33933508 33933608  

Fax:

+86-21-33932401  

Email:

Website:

ShangHai Sino-IC Microelectronic Co., Ltd.  

6.