SINO-IC-SE30100B

Jan 2015  

SE30100B  

N-Channel Enhancement-Mode MOSFET  

Revision: A  

General Description  

Features  

This type used advanced trench technology and

 

For a single MOSFET  

design to provide excellent R

DS(ON)

with low gate  

charge.  





V

DS

= 30V  

R





High density cell design for ultra low R

DS(ON)  

Excellent package for good heat dissipation  

Pin configurations  

See Diagram below  

TO-252  

Absolute Maximum Ratings  

Parameter  

Drain-Source Voltage  

Symbol  

V

DS  

Rating  

30  

Units  

V

V

Gate-Source Voltage  

V

GS  

±

20  

100  

Continuous  

Drain Current  

I

D  

A

Pulsed  

400  

350  

Avalanche Energy  

L=0.1mH  

@TA=25

℃  

E

AS  

P

D  

T

J  

mJ  

W

Total Power Dissipation  

110  

Operating Junction

T

e

mperature Range  

-55 to 175  

℃

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

SE30100B  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

D

=250

μ

A, V

GS

=0 V  

V

DS

=30V, V

GS

=0V  

V

GS

=20V  

30  

V

μ

A  

nA  

V

1

100  

3

I

GSS  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

, I

D

=250

μ

A  

V

GS

=10V, I

D

=20A  

V

DS

=10V, I

D

=20A  

I

S

=30A, V

GS

=0V  

1

1.6  

3.0  

Static Drain-Source On-Resistance  

Forward Transconductance  

4.0  

m

Ω  

S

50  

V

SD  

Diode Forward Voltage  

1.2  

V

I

S  

Max. Body-Diode Continuous Current  

100  

A

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

3300  

356  

pF  

pF  

pF  

V

GS

=0V, V

DS

=25V,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

308  

SWITCHING PARAMETERS  

2

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

d(off)  

t

d(r)  

Total Gate Charge  

70  

8.8  

16.3  

11  

nC  

nC  

nC  

ns  

ns  

ns  

ns  

V

GS

=10V, V

DS

=15

V

,  

I

D

=30A  

Gate Source Charge  

Gate Drain Charge  

Turn-On Delay Time  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

V

GS

=4.5V, V

DS

=15V,  

R

25  

160  

60  

t

d(f)  

Thermal Resistance  

Symbol Parameter  

Min  

Typ  

75  

Units  

℃

/W  

R

θ

JA  

Junction to Ambient  

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

SE30100B  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SE30100B  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.  

SE30100B  

Package Outline Dimension  

TO-252  

ShangHai Sino-IC Microelectronic Co., Ltd.  

5.  

The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.  

© 2005 SINO-IC – Printed in China – All rights reserved.  

SHANGHAI SINO-IC MICROELECTRONICS CO., LTD  

Add:

Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-

T

e

ch Park, Pudong,  

Shanghai 201203, China  

Phone:

+86-21-33932402 33932403 33932405 33933508 33933608  

Fax:

+86-21-33932401  

Email:

Website:

ShangHai Sino-IC Microelectronic Co., Ltd.  

6.