SINO-IC-SE30150

SE30150  

N-Channel Enhancement-Mode MOSFET  

Revision: A  

General Description  

Features  

For a single MOSFET  

Advanced trench technology to provide  

excellent RDS(ON), low gate charge and  

low operation voltage. This device is  

suitable for using as a load switch or in  

PWM applications.  





V

DS

= 30V  

R

DS(ON)

= 2.3m

Ω

@ V

GS

=10V  







Simple Drive Requirement  

Small Package Outline  

Surface Mount Device  

Pin configurations  

See Diagram below  

TO-263  

Absolute Maximum Ratings  

Parameter  

Symbol  

Rating  

30  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

V

GS  

V

V

±

20  

90  

Continuous  

Drain Current  

I

D  

A

Pulsed  

200  

42  

Total Power Dissipation  

Avalanche Current  

@TA=25

℃  

P

D  

I

AS  

E

AS  

T

J  

W

A

45  

Avalanche energy L=0.1mH  

121  

mJ  

℃

Operating Junction

T

e

mperature Range  

-55 to 150  

Thermal Resistance  

Symbol Parameter  

Typ  

Max  

Units  

℃

/W  

R

θ

JC  

Thermal Resistance Junction to Case  

2.97  

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

SE30150  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

D

=250

μ

A, V

GS

=0 V  

V

DS

=30V, VGS=0V  

V

GS

=20V  

30  

V

μ

A  

nA  

V

10  

100  

2.3  

2.7  

I

GSS  

V

GS(th)  

R

DS(ON)  

V

DS

= V

GS

, I

D

=250

μ

A  

V

GS

=10V, I

D

=22.5A  

1.3  

–

2.3  

Static Drain-Source On-Resistance  

m

Ω  

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

1600  

53  

2100  

120  

pF  

pF  

pF  

V

GS

=0V, V

DS

=15V,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

890  

SWITCHING PARAMETERS  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

Total Gate Charge  

Gate Source Charge  

Gate Drain Charge  

Turn-On Delay Time  

21  

5.6  

2.3  

4.4  

nC  

nC  

nC  

ns  

V

GS

=10V,  

I

D

=45A  

V

DS

=15V,  

V

GS

=10V, V

DS

=20

V

,  

R

GEN

=4.7

Ω  

t

d(off)  

t

d(r)  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

5.7  

11.5  

24  

ns  

ns  

ns  

t

d(f)  

Source-Drain Diode Characteristics  

V

SD  

I

S  

Diode Forward Voltage  

Diode Forward Current  

V

GS

=0V,I

S

=45A  

1.2  

90  

V

A

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

SE30150  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SE30150  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.  

SE30150  

Package Outline Dimension  

TO-263  

ShangHai Sino-IC Microelectronic Co., Ltd.  

5.  

The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.  

© 2005 SINO-IC – Printed in China – All rights reserved.  

SHANGHAI SINO-IC MICROELECTRONICS CO., LTD  

Add:

Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-

T

e

ch Park, Pudong,  

Shanghai 201203, China  

Phone:

+86-21-33932402 33932403 33932405 33933508 33933608  

Fax:

+86-21-33932401  

Email:

Website:

ShangHai Sino-IC Microelectronic Co., Ltd.  

8.