SINO-IC-SE3090K

SE3090K  

N-Channel Enhancement-Mode MOSFET  

Revision: A  

General Description  

Features  

This type used advanced trench technology

 

For a single MOSFET  

and design to provide excellent RDS(ON) with  

low gate charge. It can be used in a wide  

variety of application  





V

DS

= 30V  

R

DS(ON)

= 4.1mΩ @ V

GS

=10V  

Pin configurations  

See Diagram below  

TO-252  

Absolute Maximum Ratings  

Parameter  

Symbol  

Rating  

30  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

V

GS  

V

V

±

20  

90  

Continuous  

Drain Current  

Pulsed  

I

D  

A

200  

105  

Total Power Dissipation  

Derating factor  

@TA=25

℃  

P

D  

W

W/

℃  

mJ  

0.7  

Single pulse avalanche energy  

E

AS  

T

J  

380  

Operating Junction

T

emperature Range  

-55 to 175  

℃

Thermal Resistance  

Symbol Parameter  

Typ  

Max  

Units  

℃

/W  

R

θJC  

Thermal Resistance Junction to Case  

–

1.43  

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

SE3090K  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

D

=250μA, V

GS

=0 V  

V

DS

= 30V, V

GS

=0V  

V

GS

=20V  

30  

38  

V

μA  

nA  

V

1

I

GSS  

100  

2.5  

5.8  

8

V

GS(th)  

V

DS

= V

GS

, I

D

=250μA  

V

GS

=10V, I

D

=20A  

1

–

1.7  

4.1  

5.9  

mΩ  

R

DS(ON)  

g

FS  

Static Drain-Source On-Resistance  

Forward Transconductance  

V

GS

=4.5V, I

D

=20A  

V

DS

=5V, I

D

=20A  

–

mΩ  

S

20  

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

3433  

360  

pF  

pF  

pF  

V

GS

=0V, V

DS

=15V,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

287  

SWITCHING PARAMETERS  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

d(off)  

t

d(r)  

Total Gate Charge

2  

Gate Source Charge  

Gate Drain Charge  

Turn-On Delay Time  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

60  

8.2  

16.4  

12  

nC  

nC  

nC  

ns  

ns  

ns  

ns  

V

GS

=10V,  

I

D

=45A  

V

DS

=15V,  

V

GS

=10V, V

DS

=15V,  

R

GEN

=3Ω  

40  

I

D

=20A  

15  

t

d(f)  

14  

Source-Drain Diode Characteristics  

V

SD  

I

S  

Diode Forward Voltage  

Diode Forward Current  

Reverse Recovery Time  

V

GS

=0V,I

S

=24A  

1.2  

90  

V

A

t

rr  

TJ=25

℃

,IF=20A  

29  

32  

nS  

Di/dt=100A/μs  

Qrr  

Reverse Recovery Charge  

nC  

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

SE3090K  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SE3090K  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.  

SE3090K  

Package Outline Dimension  

TO-220  

ShangHai Sino-IC Microelectronic Co., Ltd.  

5.  

SE3090K  

TO-252  

The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.  

© 2005 SINO-IC – Printed in China – All rights reserved.  

SHANGHAI SINO-IC MICROELECTRONICS CO., LTD  

Add:

Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,  

Shanghai 201203, China  

Phone:

+86-21-33932402 33932403 33932405 33933508 33933608  

Fax:

+86-21-33932401  

Email:

Website:

ShangHai Sino-IC Microelectronic Co., Ltd.  

6.