SINO-IC-SE3205A

Dec 2014  

SE3205A  

N-Channel Enhancement-Mode MOSFET  

Revision: A  

General Description  

Features  

This type used advanced trench technology and

 

For a single MOSFET  

design to provide excellent R

DS(ON)

with low gate  

charge.  







V

DS

= 55V  

R

DS(ON)

= 6.5m

Ω

@ V

GS

=10V  





High density cell design for ultra low R

DS(ON)  

Excellent package for good heat dissipation  

Pin configurations  

See Diagram below  

TO-220  

Absolute Maximum Ratings  

Parameter  

Drain-Source Voltage  

Symbol  

Rating  

55  

Units  

V

DS  

V

GS  

V

V

Gate-Source Voltage  

±

20  

110  

Continuous  

Drain Current  

I

D  

A

Pulsed  

390  

200  

T

o

tal Power Dissipation  

@TA=25

℃  

P

D  

T

J  

W

Operating Junction

T

e

mperature Range  

-55 to 175  

℃

ShangHai Sino-IC Microelectronic Co., Ltd.  

1.  

SE3205A  

Electrical Characteristics

 

(TJ=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max  

Units  

OFF CHARACTERISTICS (Note 2)  

BV

DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain to Source Leakage Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

D

=250

μ

A, V

GS

=0V  

V

DS

=55

V

,

V

GS

=0V  

V

GS

=20V  

55  

V

μ

A  

nA  

V

100  

100  

3.9  

I

GSS  

V

GS(th)  

R

DS(ON)  

V

DS

= V

GS

, I

D

=250

μ

A  

V

GS

=10

V

,

I

D

=60A  

2.1  

Static Drain-Source On-Resistance  

6.5  

7.9  

m

Ω  

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

Input Capacitance  

3247  

781  

211  

pF  

pF  

pF  

V

GS

=0

V

,

V

DS

=25

V

,  

f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

SWITCHING PARAMETERS  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

d(off)  

t

d(r)  

T

o

tal Gate Charge

2  

Gate Source Charge  

Gate Drain Charge  

Turn-On Delay Time  

Turn-Off Delay Time  

Turn-On Rise Time  

Turn-Off Fall Time  

146  

35  

nC  

nC  

nC  

ns  

ns  

ns  

ns  

V

GS

=10

V

,

V

DS

=45

V

,  

I

D

=62A  

54  

V

GS

=10

V

,

V

DS

=28

V

,  

14  

50  

R

GEN

=4.5

Ω  

101  

65  

t

d(f)  

ShangHai Sino-IC Microelectronic Co., Ltd.  

2.  

SE3205A  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

3.  

SE3205A  

Typical Characteristics  

ShangHai Sino-IC Microelectronic Co., Ltd.  

4.  

SE3205A  

Package Outline Dimension  

TO-220  

ShangHai Sino-IC Microelectronic Co., Ltd.  

5.  

SE3205A  

The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.  

©

2005 SINO-IC

–

Printed in China

–

All rights reserved.  

SHANGHAI SINO-IC MICROELECTRONICS CO., LTD  

Add:

Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-

T

ech Park, Pudong,  

Shanghai 201203, China  

Phone:

+86-21-33932402 33932403 33932405 33933508 33933608  

Fax:

+86-21-33932401  

Email:

Website:

ShangHai Sino-IC Microelectronic Co., Ltd.  

6.